BR25H020FVT-2CE2 Allicdata Electronics

BR25H020FVT-2CE2 Integrated Circuits (ICs)

Allicdata Part #:

BR25H020FVT-2CE2TR-ND

Manufacturer Part#:

BR25H020FVT-2CE2

Price: $ 0.22
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 2K SPI 10MHZ 8TSSOPB
More Detail: EEPROM Memory IC 2Kb (256 x 8) SPI 10MHz 8-TSSOP-...
DataSheet: BR25H020FVT-2CE2 datasheetBR25H020FVT-2CE2 Datasheet/PDF
Quantity: 3000
1 +: $ 0.22000
10 +: $ 0.21340
100 +: $ 0.20900
1000 +: $ 0.20460
10000 +: $ 0.19800
Stock 3000Can Ship Immediately
$ 0.22
Specifications
Series: Automotive, AEC-Q100
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B
Description

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BR25H020FVT-2CE2 is a widely used Memory component. It is used in a variety of applications which range from small single-board computers to large server-grade systems. The component is also widely used in embedded systems and is a popular choice for compact products as it has a small form factor. BR25H020FVT-2CE2 offers a density of 2Mbits and has a write speed of 20Mhz. It is capable of supporting up to 4 separate banks, a common feature of most high-density Memory components.

BR25H020FVT-2CE2 is a flash-type Memory component which means it is composed of non-volatile cells which can retain data after power is removed. The component is also known as a flash Memory since the data stored within it can be rapidly accessed and updated. It is especially reliable in application fields that change frequently, such as industrial automation, medical equipment and consumer electronics.

The basic operating principle of BR25H020FVT-2CE2 is relatively straightforward. The component operates as an integrated circuit with many discrete components that interact together to read and write data within the Memory. It is composed of two main sections, the control logic circuitry and the Memory array. The control logic circuitry is responsible for controlling the various operations for accessing the data, such as writing and erasing. It is also responsible for the storing and retrieving of data from the Memory array. The Memory array portion of the component consists of the actual cells that store the data.

The write speed of BR25H020FVT-2CE2 is 20Mhz, allowing for quick data storage and retrieval. The device uses a technology called multi-level cell (MLC) architecture for storing data. This technology allows for more data to be stored within a single cell than traditional single-level cell (SLC) architecture. This improved density and write speed make BR25H020FVT-2CE2 especially suitable for applications which require quick access to large amounts of data.

BR25H020FVT-2CE2 also offers significant advantages in terms of power and voltage requirements. The device is designed to operate on a single 3.3V operating voltage, as opposed to the 5V operating voltage most Memory components usually require. This significantly lowers the power demands on the system, making it especially suitable for applications with strict power requirements. Additionally, the device requires very low standby current, making it an ideal choice for applications with stringent idle current requirements.

BR25H020FVT-2CE2 is a high-density Memory component which is suitable for a wide range of applications. It offers improved write speed, power and voltage requirements compared to most Memory components on the market today, making it an excellent choice for a variety of applications in various industries.

The specific data is subject to PDF, and the above content is for reference

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