Allicdata Part #: | BR25A256FJ-3MGE2TR-ND |
Manufacturer Part#: |
BR25A256FJ-3MGE2 |
Price: | $ 0.54 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | 105°C OPERATION SPI BUS EEPR |
More Detail: | EEPROM Memory IC 256Kb (32K x 8) SPI 10MHz 8-SOP-... |
DataSheet: | BR25A256FJ-3MGE2 Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.48409 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 256Kb (32K x 8) |
Clock Frequency: | 10MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP-J |
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BR25A256FJ-3MGE2 is a type of memory module. Its application field and working principles are important for understanding how it functions. This article will discuss the application field and working principles of BR25A256FJ-3MGE2.
Application field of BR25A256FJ-3MGE2
BR25A256FJ-3MGE2 is a high-capacity RAM (Random Access Memory) module. It provides fast and reliable storage capability for applications where a larger RAM capacity is needed. It can be used as main memory in CPUs (Central Processing Units) of supercomputers and servers, or in communication equipment and medical equipment.
It is also ideal for use in embedded systems or industrial control systems or home entertainment systems.
BR25A256FJ-3MGE2 supports 3 MHz clock frequency and offers a maximum memory capacity of 32M
Working Principle of BR25A256FJ-3MGE2
BR25A256FJ-3MGE2 is a DRAM (Dynamic Random Access Memory) module. DRAMs are the most common type of memory used today. They are made up of a matrix of tiny, wire-coupled capacitors and transistors. On their own, DRAMs can store only a limited amount of data, but when used as modules, they offer much larger memory capacities.
To store data, the capacitors on the DRAM must be charged or discharged. When they are discharged, they represent a logic low and when they are charged, they represent a logic high. When they are charged, they are able to hold the charge indefinitely, which is what makes the data persistent.
To read or write data, the transistors are used to either charge or discharge the capacitors. To write data, the capacitors are charged to represent the desired state. To read data, the capacitors are allowed to charge or discharge until a voltage level is reached and this voltage level is read as the data in the memory module. This process is known as “refreshing” and must be done periodically in order to maintain the data integrity.
BR25A256FJ-3MGE2 also has built-in Error Correction Code (ECC) for detecting and correcting errors in the data. It also has on-die termination (ODT) to reduce signal reflections from neighboring pins.
In summary, BR25A256FJ-3MGE2 is a high-capacity DRAM module that can be used in a variety of applications. It supports 3 MHz clock frequency and offers a maximum memory capacity of 32M. It also has built-in ECC and ODT features for reliable data storage and retrieval.
The specific data is subject to PDF, and the above content is for reference
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