BR93G56F-3AGTE2

The BR93G56F-3AGTE2 is an integrated circuit memory module developed by various semiconductor manufacturers. It is usually used in the application of data storage and retrieval systems such as embedded computers, central processing units, and personal computers. This memory module has a 16-bit data bus and uses a 64-bit word extended to 72-bit words to access memory locations. It uses a page mode to perform fast read and write operations, allowing the entire page to be transferred to or from memory in one cycle.

The BR93G56F-3AGTE2 has a two-stage architecture that includes an address buffer and a DRAM controller to control access to the memory. The DRAM controller manages the timing of all read and write operations, as well as other operations such as refreshes and precharges. It also controls all address generation, including the bank and row addresses. The address bus connects the main system to the address buffer, allowing the BR93G56F-3AGTE2 to access memory without disturbing the main system.

The BR93G56F-3AGTE2 has a fast page write feature that improves the speed of write programming. When a bank is selected for write access, all the data for the given bank is stored in the cache and then written in one transfer. This reduces the time needed to program a given set of data by up to 50 percent. In addition, the BR93G56F-3AGTE2 also features a fast read mode that provides a peak data transfer rate of 8192 bytes per cycle.

The BR93G56F-3AGTE2 operates in the low-voltage range, between 1.8V and 3.3V. It uses split supplies providing a “split-rail” voltage, which improves the performance of the I/O signal and reduces the power consumption. In addition, the module also features an on-board signal integrity which is designed to reduce reflections, jitter, and noise, thus increasing signal integrity and system performance.

All in all, the BR93G56F-3AGTE2 is a high-performance integrated circuit memory module that is well suited for embedded, central processing unit, and personal computer applications. Its fast page write and fast read features, low operating voltage, and high signal integrity make it an excellent choice for a variety of applications. As the demand for increased storage and performance grows, the BR93G56F-3AGTE2 module will continue to be an attractive choice for memory applications.