BR93G86FVM-3GTTR Allicdata Electronics
Allicdata Part #:

BR93G86FVM-3GTCT-ND

Manufacturer Part#:

BR93G86FVM-3GTTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 16K SPI 3MHZ 8MSOP
More Detail: EEPROM Memory IC 16Kb (2K x 8, 1K x 16) SPI 3MHz ...
DataSheet: BR93G86FVM-3GTTR datasheetBR93G86FVM-3GTTR Datasheet/PDF
Quantity: 2975
Stock 2975Can Ship Immediately
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8, 1K x 16)
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: 8-MSOP
Base Part Number: BR93G86
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BR93G86FVM-3GTTR is a member of the memory family that is used to store digital information. It has a typical bit density of 93 Gbit and a typical voltage of 1.2 V. This memory has a wide variety of practical applications and a deep understanding of its working principle can unlock its full uses.

Application of BR93G86FVM-3GTTR

BR93G86FVM-3GTTR can be used in many different fields. It has become an important part of modern data storage and computer system. It is used as main memory in many consumer electronics such as tablets, laptops, smartphones and other mobile devices. It can also be used as embedded memory in many gadgets and apppliances such as washing machines, refrigerators and other home appliances, which helps to store the setting and preferences of users.

In addition, the BR93G86FVM-3GTTR is also widely used for server storage solutions. Enterprises choose it usually because it is fast, reliable and affordable. And it can be used in embedded systems and high-performance computing to help process data more efficiently.

Working Principle of BR93G86FVM-3GTTR

The BR93G86FVM-3GTTR has two sides, an input side and an output side. The input side is where data is written into the memory and the output side is where the data is read from the memory. The BR93G86FVM-3GTTR works by storing data into cells, which are made up of transistors. Each cell has a certain amount of storage capacity and can store a certain amount of data.

When data is written into a cell, a charge is applied to the transistor and this turns it on, which indicates that the cell is in a “stored” state. To read the data from a cell, the charge is reversed and the transistor turns off, which indicates that the cell is in a “read” state. The process of reading and writing data is controlled by the use of addressing pins, which indicate the address of each individual cell.

The BR93G86FVM-3GTTR also employs error correction and error detection technology to ensure the reliability of data stored in the memory. This technology uses coding and a process of checking and rechecking of data to ensure that the data is being recorded and read-back correctly.

The BR93G86FVM-3GTTR is a powerful and comprehensive member of the memory family. Its application can be found in various consumer electronics and server solutions, and its working principle is based on the use of transistors to store and read data. Understanding its working principle can help users get the most out of this reliable and efficient memory.

The specific data is subject to PDF, and the above content is for reference

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