Allicdata Part #: | BR93L66F-WE2TR-ND |
Manufacturer Part#: |
BR93L66F-WE2 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 4K SPI 2MHZ 8SOP |
More Detail: | EEPROM Memory IC 4Kb (256 x 16) SPI 2MHz 8-SOP |
DataSheet: | BR93L66F-WE2 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 4Kb (256 x 16) |
Clock Frequency: | 2MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.8 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package: | 8-SOP |
Base Part Number: | BR93L66 |
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BR93L66F-WE2 Memory: Application Field and Working Principle
The BR93L66F-WE2 is a type of memory integrated circuit widely used today in computer hardware and memory storage devices, including flash memory cards. The device was released in 2016 by Toshiba, a leading supplier in the memory and storage device industry.
The BR93L66F-WE2 is a high-performance, feature-rich device. It is capable of storing up to 64 kilobytes of data and accessing up to 4096 addresses, providing unprecedented memory density and power efficiency. The device also offers a wide variety of features, including low-power operating modes and voltage range selection.
Application Field
The BR93L66F-WE2 is mostly found in applications requiring large amounts of storage, such as digital cameras, video games, memory cards, and other computer peripherals. It is also widely used for memory expansion in embedded systems, such as those used in industrial automation. Furthermore, the device has found wide application in automotive and aerospace applications, particularly in systems requiring data logging and data processing.
Working Principle
The BR93L66F-WE2 functions as an integrated circuit with many complex components. It is composed of three main elements: a structure containing memory cells, plus I/O lines, and a voltage generator. The memory cells are arranged in an array, each containing a tiny capacitor capable of storing a charge. When the device is powered up, the voltage generator produces a constant current that is sent to the memory cells and I/O lines. Depending on the charge stored on the memory cells, the current will vary.
When a programming instruction is issued, the voltage generator sends a high voltage to the cells, which causes a reaction; depending on the previously stored value, the cells either store a 0 or a 1. When the voltage is reduced, the charge is maintained, and the data stored.
The I/O lines are responsible for passing either the 0 or the 1 values stored in the cells to the connected device. When a read instruction is executed, the I/O will connect to the device and transfer the stored data.
The BR93L66F-WE2 is designed to operate at an extremely low power consumption level. It is capable of operating in a variety of conditions, including at temperatures ranging from -40 to 85 Celsius, and a wide range of voltages (2.7 to 3.6V).
In conclusion, the BR93L66F-WE2 is a powerful and versatile memory integrated circuit used in a variety of applications requiring high-density memory storage and low power consumption. Its I/O lines provide a fast data transfer rate, enabling the device to quickly store and retrieve data.
The specific data is subject to PDF, and the above content is for reference
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