BR93G76FVT-3BGE2 Integrated Circuits (ICs) |
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Allicdata Part #: | BR93G76FVT-3BG2TR-ND |
Manufacturer Part#: |
BR93G76FVT-3BGE2 |
Price: | $ 0.22 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 8K SPI 3MHZ 8TSSOP |
More Detail: | EEPROM Memory IC 8Kb (512 x 16) SPI 3MHz 8-TSSOP-... |
DataSheet: | BR93G76FVT-3BGE2 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.19385 |
6000 +: | $ 0.18369 |
15000 +: | $ 0.18051 |
30000 +: | $ 0.17622 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 8Kb (512 x 16) |
Clock Frequency: | 3MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP-B |
Base Part Number: | BR93G76 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BR93G76FVT-3BGE2 Memory
BR93G76FVT-3BGE2 memory is a type of Flash memory, primarily used as a form of non-volatile RAM. It provides permanent storage and secure operation, is rewritable, reliable, and able to withstand extreme temperatures and vibrations. BR93G76FVT-3BGE2 is often used in embedded systems, medical systems and automotive applications, as well as increasingly in consumer electronics. It is available in densities ranging from 8 Mbits to 128 Mbits.
Application field
BR93G76FVT-3BGE2 memory is a popular choice for embedded applications due to its low power requirements, wide temperature range and durable construction. It is commonly used in automotive applications such as engine control units, transmission control units and brake systems. Other applications include aerospace systems, industrial control, medical equipment, and consumer electronics. These uses are likely to continue to grow as BR93G76FVT-3BGE2 memory technology advances.
Working principle
At the core of BR93G76FVT-3BGE2 is a floating-gate transistor, consisting of two layers insulated from each other. In this memory type, a thin layer of electrons are stored on the gate, allowing data to be written, erased and rewritten many times. The main advantage of this type of memory is that the data is non-volatile, meaning it can be stored permanently even when the power is removed. Another advantage is that the data is secured, thanks to the addition of extra insulation layers that protect against unintended changes.
When data is written, the electrons are added to the thin layers on the gate by using a high voltage pulse. This creates a positive charge in the gate, which represents a \'1\' bit in the data. In order to erase the data, a reverse voltage is applied, which causes the electrons to be removed from the thin layers. This creates a negative charge in the gate, which represents a \'0\' bit in the data. Both the read and write operations are highly reliable and stable.
BR93G76FVT-3BGE2 memory can be used in systems that require reliable data storage for extended periods of time. By relying on non-volatile memory, data can be safely stored even during power outages, protecting it from being wiped or corrupted. Furthermore, its low power requirements, wide temperature range, secure operation and rewritable features make it an ideal choice in a variety of embedded applications.
The specific data is subject to PDF, and the above content is for reference
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