BR93G56NUX-3ATTR Allicdata Electronics
Allicdata Part #:

BR93G56NUX-3ATTR-ND

Manufacturer Part#:

BR93G56NUX-3ATTR

Price: $ 0.11
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 2K SPI VSON008X2030
More Detail: EEPROM Memory IC 2Kb (128 x 16) SPI 3MHz VSON008X...
DataSheet: BR93G56NUX-3ATTR datasheetBR93G56NUX-3ATTR Datasheet/PDF
Quantity: 1000
4000 +: $ 0.10154
8000 +: $ 0.09929
12000 +: $ 0.09757
28000 +: $ 0.09526
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (128 x 16)
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: VSON008X2030
Base Part Number: BR93G56
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory encompasses a vast selection of devices, components and systems that store data and enable computers to process information. BR93G56NUX-3ATTR memory is one of the types of memory that has become widely used in industry and is specifically designed to provide reliable long-term data storage. This article takes a look at the application field and working principle of BR93G56NUX-3ATTR memory.

Applications of BR93G56NUX-3ATTR Memory

As a type of non-volatile memory, BR93G56NUX-3ATTR memory is ideal for data storage applications. It is widely used in industrial settings, such as in manufacturing, automation and process control. Its ability to store data without the need for power makes it well-suited for use in embedded systems and portable devices, such as portable hand-held scanners and radio-frequency identification (RFID) tags. In addition, BR93G56NUX-3ATTR memory can be used for program code storage in microcontrollers.

Working Principle

BR93G56NUX-3ATTR memory relies on electrically erasable programmable read-only memory (EEPROM) technology. EEPROM is a form of non-volatile memory which can be written to and erased many times. The amount of data that can be written to a BR93G56NUX-3ATTR memory device is determined by its chip size, as well as the voltage level of the circuit in which it is used. EEPROM uses a floating-gate structure in which electrons are stored in an oxide layer. When a gate voltage is applied, the electrons are released, which allows the device to store or retrieve data.

In order to write data to a BR93G56NUX-3ATTR memory device, a write signal is applied with the help of a special programming tool. This signal passes through the device, charging the floating-gate structure and allowing electrons to be stored. In order to read data from the device, a read signal is applied and the electrons are then drawn off, providing the data.

In addition to EEPROM, many BR93G56NUX-3ATTR memory devices make use of flash memory technology. Flash memory is a type of non-volatile memory which can be written to and erased in blocks. Flash memory devices make use of a floating-gate structure which is similar to EEPROM, but flash memory devices make use of larger blocks of data and have the added benefit of being able to erase data much more quickly than EEPROM. Flash memory is also more reliable, as it is less sensitive to radiation and power outages.

Conclusion

BR93G56NUX-3ATTR memory is a type of non-volatile memory which is designed for long-term data storage. It is used in industrial settings, such as in process control and automation, as well as in embedded systems and portable devices. In terms of technology, BR93G56NUX-3ATTR memory devices make use of EEPROM and flash memory. Flash memory is more reliable and offers faster erasing capabilities compared to EEPROM, making it the better choice in many cases. This article has taken a look at the application field and working principle of BR93G56NUX-3ATTR memory.

The specific data is subject to PDF, and the above content is for reference

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