BSD223P Allicdata Electronics
Allicdata Part #:

BSD223PINTR-ND

Manufacturer Part#:

BSD223P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2P-CH 20V 0.39A SOT363
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 390mA 250mW Su...
DataSheet: BSD223P datasheetBSD223P Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Base Part Number: BSD223
Supplier Device Package: PG-SOT363-6
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 390mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Transistors, such as FETs and MOSFETs, are used in many applications which require amplification, switching, or controlling the flow of electricity. Arrays of transistors, like the BSD223P, are used as multiple points of control to provide a more efficient way of managing electrical circuits. In this article, we will explore the application field and working principle of the BSD223P.

The BSD223P is an array of four separate N-channel MOSFETs. Each of the four individual MOSFETs has a drain, source, and gate terminal designed to control current flow. This type of transistor array is particularly useful for switching circuits where a single control voltage can be used to switch multiple devices at the same time. In addition to the use of MOSFET arrays in switching circuits, they can also be used to control the flow of current through a circuit. This is accomplished by adjusting the voltage applied to the gate terminal of each of the four MOSFETs in the array.

The BSD223P is designed for switching and/or amplifying loads of up to 10 amperes of current. This makes it an ideal choice for applications where low-power, fast switching is necessary, such as computer systems or audio equipment. The device is also designed with an acceptably low on-resistance (RDSon), which ensures that the flow of current is not affected by excessive power consumption. Finally, the device isconfigured with a buffer circuit which helps reduce the effects of ringing and capacitance on the circuit.

The working principle of the BSD223P is based on the use of N-channel MOSFETs. When no voltage is applied to the gate terminal, the MOSFET is in a non-conductive state, meaning that no current will flow between the source and drain terminals. However, when a voltage is applied to the gate terminal, the MOSFET becomes conductive and current can flow between the source and drain terminals. Since each of the four individual MOSFETs in the array can be independently controlled by a single control voltage, the array can be used to control multiple devices at the same time.

The BSD223P is a versatile device with many applications. It can be used to create high-power switch controls, such as those used in audio equipment and computer systems. It can also be used as a power amplifier for controlling high-power loads. Finally, the device is small and compact, making it an ideal choice for applications where space is at a premium. Overall, the device is a cost-effective, efficient control option for many applications.

The specific data is subject to PDF, and the above content is for reference

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