BSD214SN L6327 Allicdata Electronics
Allicdata Part #:

BSD214SNL6327INTR-ND

Manufacturer Part#:

BSD214SN L6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 1.5A SOT-363
More Detail: N-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount P...
DataSheet: BSD214SN L6327 datasheetBSD214SN L6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BSD214SN L6327 is a high performance dual N-channel enhancement mode power field effect transistor (FET) designed for applications such as motor control, DC-DC converters, DVD/CD recorders, cellular telephone power amplifiers, etc. It has an extremely fast switching speed and low on-state resistance (Rdson). The device is fabricated using SupreMOS GD-FET Technology, which uses a nitrided oxide-silicon superjunction structure for improved performance.

Application Field

The BSD214SN L6327 is specifically designed for use in DC-DC converters, power switches and motor control applications, where it can act as a power switch switching both AC and DC signals. It is also suitable for other applications such as DC-AC converters and inverters, audio power amplifiers, and power supply circuits.

Working Principle

A field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current. The BSD214SN L6327 is a dual N-channel Enhancement-mode FET, meaning that it has two N-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) chips being operated in parallel. It utilizes the "enhancement" principle, which means that the current flow is controlled by the gate voltage; when the gate voltage is zero, the device is off and when it is greater than 0 V, it is on.

The device has a low on-state resistance (Rds_on), meaning that it has high conduction performance, allowing for fast switching speed. It also has very low static power dissipation and is not prone to shoot-through, making it very suitable for high frequency switching applications.

Conclusion

The BSD214SN L6327 is a high performance dual N-channel enhancement mode power field effect transistor (FET). It is specifically designed for use in DC-DC converters, power switches and motor control applications, where it can act as a power switch switching both AC and DC signals. The device has a low on-state resistance (Rds_on) and fast switching speed, making it very suitable for high frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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