
Allicdata Part #: | BSD214SNL6327INTR-ND |
Manufacturer Part#: |
BSD214SN L6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 1.5A SOT-363 |
More Detail: | N-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount P... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.2V @ 3.7µA |
Package / Case: | 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: | PG-SOT363-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 143pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 0.8nC @ 5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 140 mOhm @ 1.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BSD214SN L6327 is a high performance dual N-channel enhancement mode power field effect transistor (FET) designed for applications such as motor control, DC-DC converters, DVD/CD recorders, cellular telephone power amplifiers, etc. It has an extremely fast switching speed and low on-state resistance (Rdson). The device is fabricated using SupreMOS GD-FET Technology, which uses a nitrided oxide-silicon superjunction structure for improved performance.
Application Field
The BSD214SN L6327 is specifically designed for use in DC-DC converters, power switches and motor control applications, where it can act as a power switch switching both AC and DC signals. It is also suitable for other applications such as DC-AC converters and inverters, audio power amplifiers, and power supply circuits.
Working Principle
A field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current. The BSD214SN L6327 is a dual N-channel Enhancement-mode FET, meaning that it has two N-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) chips being operated in parallel. It utilizes the "enhancement" principle, which means that the current flow is controlled by the gate voltage; when the gate voltage is zero, the device is off and when it is greater than 0 V, it is on.
The device has a low on-state resistance (Rds_on), meaning that it has high conduction performance, allowing for fast switching speed. It also has very low static power dissipation and is not prone to shoot-through, making it very suitable for high frequency switching applications.
Conclusion
The BSD214SN L6327 is a high performance dual N-channel enhancement mode power field effect transistor (FET). It is specifically designed for use in DC-DC converters, power switches and motor control applications, where it can act as a power switch switching both AC and DC signals. The device has a low on-state resistance (Rds_on) and fast switching speed, making it very suitable for high frequency switching applications.
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