BSD840NH6327XTSA1 Allicdata Electronics

BSD840NH6327XTSA1 Discrete Semiconductor Products

Allicdata Part #:

BSD840NH6327XTSA1TR-ND

Manufacturer Part#:

BSD840NH6327XTSA1

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2N-CH 20V 0.88A SOT363
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 880mA 500mW Su...
DataSheet: BSD840NH6327XTSA1 datasheetBSD840NH6327XTSA1 Datasheet/PDF
Quantity: 30000
3000 +: $ 0.06905
Stock 30000Can Ship Immediately
$ 0.08
Specifications
Vgs(th) (Max) @ Id: 750mV @ 1.6µA
Base Part Number: BSD840
Supplier Device Package: PG-SOT363-6
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V
Current - Continuous Drain (Id) @ 25°C: 880mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSD840NH6327XTSA1 is a high voltage insulated gate bipolar transistor (also known as an insulated gate field-effect transistor or IGFET) array consisting of two independent N-channel enhancement-mode power MOSFETs. The device is well-suited for a variety of automotive, industrial and telecom applications. This advanced device features low on-resistance characteristics and high drain-source breakdown voltage (BVDSS), making it well-suited for applications requiring a high voltage level.

Application field

The BSD840NH6327XTSA1 is an ideal choice for use in space-limited industrial and telecom applications, such as circuit protection controllers, flyback converters, motor speed controllers, PFCs, STDs, and solenoid drivers. It can also be used for power cont toy application, such as relays, contactors, and motor actuators. Due to its low on-resistance and high voltage output, the BSD840NH6327XTSA1 can provide a cost effective solution for driving medium power applications without the need for external MOSFETs.

Working principle

The BSD840NH6327XTSA1 is an integrated power MOSFET array that utilizes two N-channel MOSFETs in parallel. The gate of each MOSFET is connected to the control circuit, allowing the power MOSFETs to be switched on and off by an electrical signal. This allows the BSD840NH6327XTSA1 to provide a higher power output than a single power MOSFET. When the electrical controlling signals are logic low level, the parallel MOSFETs are both on, providing a low on-resistance (RDSON) path for current to flow between the drain and the source. When the valve is opened, the electrical controlling signals are logic high level, the parallel MOSFETs are both off, providing an open circuit path between drain and source.

Conclusion

The BSD840NH6327XTSA1 provides low on-resistance, excellent power handling capabilities, and a high voltage level. It is well-suited for a variety of automotive, industrial, and telecom applications. The integrated power MOSFET array provides high efficiency and reliable operation over a wide range of load conditions. Lastly, its low cost makes it attractive to a wide range of individuals, businesses and industries.

The specific data is subject to PDF, and the above content is for reference

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