BSD816SNL6327HTSA1 Discrete Semiconductor Products |
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| Allicdata Part #: | BSD816SNL6327HTSA1TR-ND |
| Manufacturer Part#: |
BSD816SNL6327HTSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 20V 1.4A SOT363 |
| More Detail: | N-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount P... |
| DataSheet: |  BSD816SNL6327HTSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 950mV @ 3.7µA |
| Package / Case: | 6-VSSOP, SC-88, SOT-363 |
| Supplier Device Package: | PG-SOT363-6 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 500mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.6nC @ 2.5V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1.4A, 2.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 2.5V |
| Current - Continuous Drain (Id) @ 25°C: | 1.4A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The BSD816SNL6327HTSA1 is a single-gate enhancement-mode MOSFET, often found in high power electronic applications. It is primarily used as a switch in applications such as power converters, DC-DC converters, AC-DC converters, power factor correction, power supplies and motor control systems..
The BSD816SNL6327HTSA1 consists of a source region, a drain region, a channel region, and a gate region. The source region is a heavily doped n-type region, while the drain region is a heavily doped p-type region. The channel region is a lightly doped region that actually forms the channel between the source and the drain. When a gate voltage is applied, this channel is turned on, allowing current to flow from the source to the drain.
The BSD816SNL6327HTSA1 MOSFET is known for its low on-resistance, low Qgd and high ESD robustness. This makes it particularly suitable for high power applications, as it can handle high currents without significant losses due to switching. Additionally, it has very low gate capacitances and low output capacitance, which lowers its switching losses further.
The BSD816SNL6327HTSA1 has a wide operating range, allowing it to function in temperatures ranging from -55 to +175 degrees Celsius, making it suitable for use in harsh environments. It also has a wide Vgs range, allowing it to be used in both high voltage and low voltage applications.
The BSD816SNL6327HTSA1 MOSFET is a highly reliable and efficient device that combines an enhanced on-state resistance with a low threshold voltage. This allows for high current capacity, low on-resistance and optimal switching performance, making it an excellent choice for a variety of power applications.
The specific data is subject to PDF, and the above content is for reference
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