BSO615CGHUMA1 Allicdata Electronics
Allicdata Part #:

BSO615CGHUMA1TR-ND

Manufacturer Part#:

BSO615CGHUMA1

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
More Detail: Mosfet Array N and P-Channel 60V 3.1A, 2A 2W Surfa...
DataSheet: BSO615CGHUMA1 datasheetBSO615CGHUMA1 Datasheet/PDF
Quantity: 2500
1 +: $ 0.21600
10 +: $ 0.20952
100 +: $ 0.20520
1000 +: $ 0.20088
10000 +: $ 0.19440
Stock 2500Can Ship Immediately
$ 0.22
Specifications
Vgs(th) (Max) @ Id: 2V @ 20µA
Base Part Number: BSO615
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BSO615CGHUMA1 is a member of a wide variety of transistors, field-effect transistors (FETs) and metal-oxide semiconductor FETs (MOSFETs) powered devices. This particular type of array is designed for power distribution and efficient use of energy. As a result, the BSO615CGHUMA1 is an important component for many commercial, industrial and military applications.

The construction of the BSO615CGHUMA1 consists of a metal oxide semiconductor (MOS) substrate. A gate layer of metal oxide semiconductor elements is included to control the flow of electrons through the device. An insulating layer provides further protection and allows the current flow to remain stable. Finally, a bond layer of metal oxide semiconductor is included to connection the components to outside circuits.

The most important feature distinguishing the BSO615CGHUMA1 is its ability to confine electrical current to a specific environment. It does this by utilizing a gate layer which acts as a barrier within the array, It acts as a switch, allowing or preventing electrons from passing through the array depending on various conditions. For example, the voltage of the current may be used to determine whether a device is “on” or “off”. Temperature and pressure may also be used to control current flow.

As a result, the BSO615CGHUMA1 offers a number of advantages. One of the most important is efficiency. The device is able to conserve energy by controlling electron flow, which helps to reduce the amount of wasted energy in power distribution. This efficiency can be especially valuable in military applications.

The BSO615CGHUMA1 can also be used for a variety of other applications. Its ability to control current makes it an excellent choice for use in computer processors, as well as in high-power conditions such as in military vehicles. Additionally, some models are available with a special coating that makes them resistant to corrosion and other environmental factors.

The BSO615CGHUMA1 is an important part of a variety of electrical and electronic systems. Its array design allows it to efficiently control power and conserve energy, making it a valuable addition in commercial, industrial, and military applications.

The specific data is subject to PDF, and the above content is for reference

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