BSO615NGHUMA1 Allicdata Electronics
Allicdata Part #:

BSO615NGHUMA1TR-ND

Manufacturer Part#:

BSO615NGHUMA1

Price: $ 0.33
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2N-CH 60V 2.6A 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 2.6A 2W Surfac...
DataSheet: BSO615NGHUMA1 datasheetBSO615NGHUMA1 Datasheet/PDF
Quantity: 1000
1 +: $ 0.33000
10 +: $ 0.32010
100 +: $ 0.31350
1000 +: $ 0.30690
10000 +: $ 0.29700
Stock 1000Can Ship Immediately
$ 0.33
Specifications
Vgs(th) (Max) @ Id: 2V @ 20µA
Base Part Number: BSO615
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSO615NGHUMA1 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) array. It has 8 N-channel MOSFETs in a single package and is designed for a wide range of powerful motor control applications. It is capable of handling voltages up to 50 volts and current up to 1.5 amps per MOSFET. The BSO615NGHUMA1 is used in a variety of industries, such as consumer electronics, industrial control and automotive applications.

The most important feature of the BSO615NGHUMA1 is its low on-state resistance. This low on-state resistance allows the device to draw less current from the source, which in turn reduces power dissipation and improves efficiency. In addition, the low on-state resistance also improves the switching performance of the device, resulting in a faster response time. As a result, the BSO615NGHUMA1 is often used for applications with high switching speeds, such as servo motors and PWM controllers.

The working principle of the BSO615NGHUMA1 is fairly simple. When a voltage is applied to the gate, it creates a field of electric potential, which in turn attracts electrons from the source. This creates a low resistance channel between the source and the drain, allowing current to flow. The voltage applied to the gate determines the current that can flow through the device, allowing it to be used to control power in a variety of applications.

The BSO615NGHUMA1 is used in a wide range of motor control applications. It can be used to reduce motor noise and improve motor efficiency. It is also used in various automotive applications to reduce power dissipation and improve power savings. Additionally, the device can be used in high voltage switching applications, such as DC-DC converters and SMPS (Switched Mode Power Supply) applications.

The BSO615NGHUMA1 is an ideal choice for a variety of motor control applications due to its low on-state resistance and fast switching speed. It is capable of handling up to 50 volts and 1.5 amps per MOSFET, making it applicable for a wide range of different motors. In addition, the device has excellent thermal characteristics, making it well-suited for motor control applications that require power dissipation and power savings.

The specific data is subject to PDF, and the above content is for reference

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