BSP752RNUMA1

Series:	*
Part Status:	Obsolete

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An Introduction to BSP752RNUMA1 Application Fields and Working Principles BSP752RNUMA1 is a logic level N-channel MOSFET manufactured by STMicroelectronics, a world leader in semiconductor technology. As a component of the STM Automotive FET Suite, BSP752RNUMA1 has been designed to be used in switch or level translation operations in a wide range of automotive environments. This component belongs to a category of logic level power distribution switches, load drivers and other products made by STMicroelectronics.BSP752RNUMA1 is a logic level N-channel MOSFET that consists of an insulated gate and an N-channel type MOSFET. It is optimized for low RDS(ON) values, up to 0.7mΩ, and reduced gate charge. The excellent on-state characteristics and the low RDS(ON) values make BSP752RNUMA1 suitable for many switching and level translation applications, from low power general purpose interfaces to high current switch/driver products in automotive and industrial markets. The operating temperature range of this component is between -55°C and +150°C, and its package is a Hardwearing TO-252AA with easy-to-assemble power terminals and a rigid flange. Its dimensions are 4.20x2.90x1.12mm, with a total height of 1.12mm and the weight of 5mg. The main applications for BSP752RNUMA1 include power distribution, switch/driver and level translation application, mainly for automotive and industrial applications. It is also suitable for a range of automotive applications, such as refrigeration equipment, brake systems, interior lighting, HVAC, and body control modules.The working principle of BSP752RNUMA1 can be mainly divided into two parts, which are the Gate Biasing Circuit and the On State Circuit. The Gate Biasing Circuit initiates the MOSFET, while the On State Circuit sets the current levels at which the MOSFET will turn On or Off. The Gate Biasing Circuit is designed to provide a stable bias current to the gate pin of the MOSFET, so that it turns On and Off in a stable manner. The biasing current is generated by a voltage source, which is usually set to 5V, allowing for the optimization of gate charge. The On State Circuit is the more complex part of the MOSFET, as it is responsible for determining the On and Off voltage thresholds, as well as the current levels of operation. The On State Circuit is made up of two elements, the gate-source voltage Vgs and the drain-source voltage Vds. When the Vgs is between 0 and 5 volts, the MOSFET is in the cut-off state, meaning that no current is allowed to flow from the drain to the source. When the Vgs is greater than 5 volts, the MOSFET is in the saturation state, meaning that current is allowed to flow from the drain to the source. In conclusion, BSP752RNUMA1 is a logic level N-channel MOSFET manufactured by STMicroelectronics, with excellent on-state characteristics and low RDS(ON) values optimized for switch or level translation operations in a wide range of automotive environments. The main applications include power distribution, switch/driver and level translation applications, mainly for automotive and industrial markets. The working principle of BSP752RNUMA1 can be divided into two parts, the Gate Biasing Circuit and On State Circuit, both of which are responsible for the stable functioning of the MOSFET.

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