BSP75GQTC

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The BSP75GQTC is a high-side N-channel logic level power MOSFET with integrated gate protection diode. It is typically used to switch inductive loads with ‘switched’ DC supplies above 40 V. Built on an advanced manufacturing process, the BSP75GQTC exhibits very low on-resistance at distances of 2.5 mV per A.
The device features a drain-source breakdown voltage (BVDSS) rating of 75 V, an operating temperature range from -55°C to 175°C, a maximum drain current of up to 4 A and a drain-source saturation voltage (VDSS) of 45 V.
Applications for the BSP75GQTC include load switching, motor/load control and DC motor control for automotive, industrial automation and mobile/portable equipment, as well as general power management and lighting control. Additionally, it is suitable for use as a high-side switch in DC-DC converter circuits.

The BSP75GQTC is a logic-level MOSFET, meaning it behaves differently at various input voltages. It is off (not conducting current) when the gate is 0 V, and begins to conduct current as the gate voltage rises above 4 V. The on-resistance of the device then increases, as the gate voltage is increased in 5 V steps up to a maximum gate voltage of 20 V. The higher the gate voltage, the higher the maximum current capacity.
The BSP75GQTC enables fast performance and efficient operation, offering high switching speed, low on-resistance and low temperature de-rating. Its integrated gate protection diode ensures the gate voltage is not exceeded during the switching process and the MOSFET is not damaged due to negative transients.
The BSP75GQTC is designed for easy integration, and comes in a space-saving DPAK package, making it a neat choice for space-precious applications.

In conclusion, the BSP75GQTC is a high current and logic level Single N-channel MOSFET, capable of operating at high voltages, suitable for applications such as automotive, industrial automation and DC-DC converters. It is able to pass large amounts of current, whilst maintaining fast switching speeds and low on-resistance. Additionally, its integrated gate protection diode ensures the MOSFET’s gate voltage does not exceed its designed maximum during switching processes. The BSP75GQTC provides an excellent solution for those seeking high-performance power management.

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