BSP716NH6327XTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSP716NH6327XTSA1TR-ND |
Manufacturer Part#: |
BSP716NH6327XTSA1 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 2.3A SOT223 |
More Detail: | N-Channel 75V 2.3A (Ta) 1.8W (Ta) Surface Mount PG... |
DataSheet: | BSP716NH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.11504 |
2000 +: | $ 0.10490 |
5000 +: | $ 0.09812 |
10000 +: | $ 0.09136 |
25000 +: | $ 0.09023 |
Vgs(th) (Max) @ Id: | 1.8V @ 218µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 315pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13.1nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 2.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.3A (Ta) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSP716NH6327XTSA1 is a part of a series of high-voltage, high-density, low-on-resistance, ultralow-threshold-voltage MOSFETs produced by Beijing Silicon Power (BSP). This device is specifically intended forHigh-Frequency DC-DC converter systems,or AC-DC control applications. It is an N-channel enhancement type MOSFET with doubly-saline nitride surface layer in order to reduce the on-resistance, and hence ensure improved performance when compared to conventional products. This device also has some basic characteristics, such as a maximum drain current of 63A, breakdown voltage of 716V, and a threshold voltage of 2V. This makes it suitable for a wide range of applications, such as power supplies, high voltage switching, over-current and over-voltage protection devices, as well as high-frequency DC-DC converters and AC-DC control applications.
The working principle of the BSP716NH6327XTSA1 MOSFET is based on the operation of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). The MOSFET is a voltage-controlled device that utilizes a band gap in the semiconductor materials to regulate the current flow through the drain and source terminals. A MOSFET has three terminals, the source, drain and gate, and each of these terminals is used to control the status of the transistor. The gate terminal, also known as the control terminal, is connected to the voltage source, while the source and drain terminals are connected to the load. The action of the MOSFET is based on the ability of a voltage applied at the gate to modify the conductivity of the channel between the source and drain. When a positive voltage is applied to the gate, the MOSFET turns on and electrons flow from the source to the drain. When a negative voltage is applied to the gate, the MOSFET switches off and the current flow is blocked.
The BSP716NH6327XTSA1 is an ideal choice for applications requiring high voltage and low on-resistance. It is used in high-frequency switching circuits, power supplies, and control applications. This device provides the necessary protection to avoid over-current and over-voltage issues, and it can also be used to lower the power consumption. It can also be used in high frequency DC-DC converters and AC-DC control applications. The BSP716NH6327XTSA1 is an excellent choice for applications requiring higher voltage and lower on-resistance, and it is an excellent choice for those needing a reliable, cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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