BSR56 Allicdata Electronics

BSR56 Discrete Semiconductor Products

Allicdata Part #:

BSR56TR-ND

Manufacturer Part#:

BSR56

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 40V 250MW SOT23
More Detail: JFET N-Channel 40V 250mW Surface Mount SOT-23-3
DataSheet: BSR56 datasheetBSR56 Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
Input Capacitance (Ciss) (Max) @ Vds: --
Resistance - RDS(On): 25 Ohms
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BSR56
Description

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JFETs, more commonly referred to as Junction Field Effect Transistors (JFETs), are an example of a semiconductor device that is widely used for many applications. JFETs are widely popular thanks to their simplicity and reliability, as well as their relative ease of use. The BSR56, also known as the Boron Silicon Rectifier, is a type of JFET. This article seeks to discuss the applications of the BSR56 and its working principle. The BSR56 is primarily used for amplifying and switching applications, where resistance between its drain and source terminals needs to be controlled. This can be seen in its use in audio amplifiers, radio-frequency (RF) amplifiers, and pre-amplifiers. The internal structure of the BSR56 consists of an N-type channel formed between its drain and source terminals, with a boron layer placed between the gate and N-type layers. The boron layer acts as an isolator, which controls the flow of electrons travelling between the drain and source. As the gate terminal is connected to a positive voltage source (VGG), electrons from the N-type region are attracted to the gate which results in a depletion layer being formed around it. This depletion layer is what acts as the resistance that helps control the electron flow between the drain and source. The greater the gate voltage, the greater the resistance across the drain to source terminal, and therefore the less current flows between these two terminals. When the gate voltage is removed (grounded), the electrons fill up the depletion layer forming a conductive path between the drain and source, thus allowing current to flow through the device. The BSR56 works in a similar way to other FETs, as it requires no bias voltage across the gate terminal. This makes it an ideal component to use when designing circuits which require accurate and reliable performance. In addition, the BSR56 is also typically used in areas where switching speed needs to be kept at a minimum, as it works at effective speeds while still providing strong and reliable performance.The BSR56 is highly efficient and cost-effective. This makes it a great choice for industrial and commercial applications, as they are typically more reliable and easier to implement, as compared to other FETs. In addition to this, the BSR56 is also very small, making it easy to integrate into many different types of circuits.In conclusion, the BSR56 is an ideal component for many different types of applications. BSR56s are typically used for amplifying and switching applications, due to their accuracy and effectiveness. Their efficient and cost-effective nature makes them a perfect choice for both industrial and commercial applications, as they are both reliable and easy to integrate into many circuits.

The specific data is subject to PDF, and the above content is for reference

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