Allicdata Part #: | BSR58LT1G-ND |
Manufacturer Part#: |
BSR58LT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 40V 350MW SOT23 |
More Detail: | JFET N-Channel 40V 350mW Surface Mount SOT-23-3 (... |
DataSheet: | BSR58LT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 8mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 800mV @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 60 Ohms |
Power - Max: | 350mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | BSR58 |
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Introduction
The BSR58LT1G is a JFET (junction field effect transistor) which is commonly used in analog circuit applications. This N-channel JFET transistor is used in applications like amplifier circuits, voltage regulation, signal processing, and analog switching. In this article, we will discuss the application field and working principle of the BSR58LT1G.
Application Fields
As an N-channel JFET, the BSR58LT1G is used in amplifier circuits and audio applications. Its high input impedance and low noise characteristics make it well-suited for amplification and signal processing. The transistor is also used in voltage regulation circuits, as it has low input capacitance and low Rds (drain-source resistance). This makes it ideal for high-frequency and high-efficiency applications. Additionally, its low on-state voltage means that it can be used in analog switching circuits, helping to minimize signal distortion.
Working Principle
The BSR58LT1G is an N-channel JFET transistor. This means that it has two p-type and one n-type semiconductor layers. The p-layers form the gate, which is connected to a voltage source. The n-layer forms the drain and the source, which are connected to the load. Varying the voltage to the gate will control the current flow through the drain and the source. When the gate voltage is increased, the current flow is increased, and when the gate voltage is decreased, the current flow is decreased.
The BSR58LT1G is a depletion mode JFET transistor, which means that it has a normally-on current flow. That is, when the voltage source is connected, the current flow will start even without applying gate voltage. Therefore, the only way to turn off the current flow is to reduce the gate voltage to a point where the current flow is reduced to zero.
Conclusion
In summary, the BSR58LT1G is an N-channel JFET transistor used in applications such as signal processing, amplifier circuits, voltage regulation, and analog switching. It has a high input impedance and a low noise, and its low input capacitance and Rds make it suitable for high-frequency and high-efficiency applications. Additionally, its depletion mode means that the only way to turn off the current flow is to reduce the gate voltage to a point where the current flow is reduced to zero. This makes it an ideal choice for analog circuits.
The specific data is subject to PDF, and the above content is for reference
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