Allicdata Part #: | BSR57,215-ND |
Manufacturer Part#: |
BSR57,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | JFET N-CH 40V 250MW SOT23 |
More Detail: | JFET N-Channel 40V 250mW Surface Mount SOT-23 (TO... |
DataSheet: | BSR57,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Drain to Source Voltage (Vdss): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 20mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 5V @ 0.5nA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 40 Ohms |
Power - Max: | 250mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 (TO-236AB) |
Base Part Number: | BSR57 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BSR57,215 is a type of Transistors - JFETs (Junction Field Effect Transistors). It is used for many applications in electronics and have been used for decades. In this article, we will discuss the application field and working principle of BSR57,215.First, let us take a look at the features of BSR57,215. This type of transistor has a low-power drain-source on-state resistance (Ron), and low gate-source leakage current (Igss). Additionally, it has high break-down voltage (Vgs) and very low noise performance. The application field of BSR57,215 is broad. It is used in many fields, such as radio communications, audio amplifiers, and switching circuits. In radio communications, it is used as an amplifier or active antenna, especially in low-noise and medium-to-high power applications. In audio amplifiers, it is commonly used in preamplifier, main amplifier, and power amplifier stages. It is also used in switching circuits, where it serves as a switchable capacitor, which can be used to change the frequency response of an audio signal.Now let us take a look at the working principle of BSR57,215. It is a semiconductor device, so it works by controlling the flow of current through it. The way it does this is by forming a junction between the drain, source, and gate. When the gate is provided with the input voltage, it creates a depletion layer, which affects the flow of current through the device. This depletion layer can be adjusted by changing the gate voltage, thereby controlling the amount of current flowing through the device.In conclusion, BSR57,215 is a highly versatile semiconductor device. It has multiple applications, such as radio communications, audio amplifiers, and switching circuits. It also has low-power drain-source on-state resistance (Ron), and low gate-source leakage current (Igss). Additionally, it has high break-down voltage (Vgs) and very low noise performance. Finally, its working principle is based on the formation of a junction between the drain, source, and gate, which allows the device to control the flow of current.
The specific data is subject to PDF, and the above content is for reference
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