Allicdata Part #: | BSS64LT1-ND |
Manufacturer Part#: |
BSS64LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 80V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 80V 100mA 60MHz 225mW... |
DataSheet: | BSS64LT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 15mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 10mA, 1V |
Power - Max: | 225mW |
Frequency - Transition: | 60MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | BSS64 |
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BSS64LT1 Application Field and Working Principle
BSS64LT1 is a type of 80V NPN low-power metal-oxide semiconductor (MOS) transistor. It comes with a low-power, medium-to-high-speed switching operation which features low-noise operation, low reverse transfer capacitance, and high switching speed. Due to its application field and working principle, the device is categorized in the group of transistors called the Bipolar Junction Transistors (BJT) Single type. This is just one type of transistor specifically developed for low-power, medium speed, noise-limited applications.
The working principle of BSS64LT1 can be explained in two stages: First is the bipolar junction transistor device action and second is the MOSFET device action. When the BSS64LT1 transistor is turned on, the base-emitter junction is forward biased resulting in current conduction through the transistor. This current is supplied from the collector to the base. The electrons then pass through the base junction and are injected into the base region which induces a field effect. This produces a depletion region that further extends towards the substrate boundary. In the MOSFET device action, the second stage begins when an applied voltage extends beyond the threshold voltage of the transistor. This voltage succeeds in breaking down the depletion region, resulting in transistor turn-on.
In its scope of application, BSS64LT1 transistors enhance the performance particularly in line servo amplifiers, vehicle antenna switches, power FETs, low-power amplifiers, RF amplifiers, high-speed switching, programmable controllers, high-speed switching replacing bipolar transistors, and many more. As current flows through the transistor, the voltage appears across the collector-to-base junction resulting in a higher input impedance, low reverse transfer capacitance, and better noise performance. In addition, the device can operate at higher temperatures. This makes it suitable for high temperature applications including measuring, calling, and controls.
In conclusion, the BSS64LT1 is used for electronic power control, noise-limited applications, high-speed switching, and temperature-controlled applications. It has a low-power switching operation that allows high performance in terms of input impedance, low reverse transfer capacitance, and better noise performance. The device is categorized as a type of Bipolar Junction Transistor (BJT) Single, which proves its excellent performance for medium-to-high-speed switching operations. It is now widely used in various industries and businesses.
The specific data is subject to PDF, and the above content is for reference
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