BSS64LT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 15mA, 50mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 10mA, 1V
Power - Max:	225mW
Frequency - Transition:	60MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	BSS64

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Introduction
The BSS64LT1G is an NPN transistor in a low profile package, capable of switching and amplification within a wide range of applications. The transistor is especially designed to reduce the profile and increase the transmission effectiveness. It is a key component of the electronic devices used in the automotive and industrial fields.BSS64LT1G Application Fields
The BSS64LT1G is a low profile general purpose transistor which can be used in a variety of applications. As an amplifier, for example, it can be used to amplify low output signal levels, whilst in switching applications, the BSS64LT1G may be used to control the signals from a push button or switch.The BSS64LT1G is particularly suited for use in automotive and industrial fields. In automotive applications, the transistor can be used in amplified electrical systems, such as audio amplifiers and motor switching circuitry. In industrial fields, the BSS64LT1G is used for controlling the speed and movement of motors, as well as controlling and monitoring power supplies, temperature levels and environmental conditions.BSS64LT1G Working Principle
The BSS64LT1G transistors use the same underlying principle of a bipolar junction transistor (BJT) as standard NPN transistors. A BJT is composed of two junctions, an emitter and base, with a collector junction placed between them.When current is applied to the base (B) of the BSS64LT1G transistor, a small amount of electrons flow from it to the emitter (E), creating a current flow from the collector to the emitter. The current flowing from the collector to the emitter is called the collector-emitter current (I_CE). The amount of current flowing from the collector to the emitter is proportional to the amount of current applied to the base and is controlled by the ratio of the base current (I_B) to the collector current (I_C).In use, the BSS64LT1G works to alter the current flow from the collector to the emitter according to the voltage applied to the base. This phenomenon is known as ‘gain’, which is the ratio of the collector-emitter current divided by the base current. Gain is used to determine how much current will flow based on the voltage applied to the base. Additionally, the BSS64LT1G is also capable of switching, where current can be turned off or on according to the base voltage applied.Conclusion
The BSS64LT1G is a low profile general purpose transistor with a wide range of applications. The transistor works on the principle of a bipolar junction transistor and is designed to reduce the profile of the device and to increase the transmission effectiveness. It is capable of amplification and switching, and is used in automotive and industrial fields, such as automotive audio amplifiers and motor switching circuitry, as well as controlling and monitoring temperature levels and environmental conditions in industrial fields.

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