BSS670S2L

Vgs(th) (Max) @ Id:	2V @ 2.7µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	360mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	75pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	2.26nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	650 mOhm @ 270mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	540mA (Ta)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The BSS670S2L is a single N-channel enhancement-mode MOSFET produced by Diodes Incorporated, formerly known as Zetex Semiconductors. It is a low gate-charge igated high-speed device with ultra-low RDS(on) and fast switching speed. This makes it suitable for high frequency operations, such as power converters, power distribution systems, and high-efficiency power management.

Application Field

BSS670S2L has a wide range of applications. It is most suitable for high frequency operations, as mentioned earlier. In high-frequency applications, such as power converters and power distribution, BSS670S2L provides high breakdown voltage to ensure smooth transition, low gate charge and turn-on resistance to reduce switching losses, and fast switching speed to minimize conduction losses. The BSS670S2L is also suitable for high-efficiency power management, because of its high efficiency. The device is able to operate at very low RDS(on), which reduces power loss significantly. In addition, its fast switching speed enables fast load switching and overcurrent protection, which protects the system and increases efficiency. The BSS670S2L is also suitable for automotive, consumer, and industrial applications. In automotive applications, the device can be used for high frequency power inverters, motor controllers, and fuel injectors. In consumer applications, the device is suitable for microcontrollers, remote controlled toys, and music players. In industrial applications, BSS670S2L can be used in motor drivers, power stages, and switching power supplies.

Working Principle

MOSFET is a type of transistor that uses voltage, instead of current, to amplify signals and control electric devices. The BSS670S2L is an N-channel enhancement-mode MOSFET, which means that it is normally off when there is no voltage applied to its gate. When a voltage is applied to its gate, the device turns on and allows current to pass through. The degree of conduction from the drain to the source depends on the voltage applied to the gate. BSS670S2L also has a low RDS(on), meaning it has very low drain-to-source resistance. This low RDS(on) reduces power loss and allows higher current to flow through the device. In addition, BSS670S2L has a fast switching speed; the device can complete its switching operations in a few nanoseconds.

Conclusion

The BSS670S2L is a single N-channel enhancement-mode MOSFET that is suitable for high frequency operations, such as power converters, power distribution systems, and power management. The BSS670S2L has a low gate-charge and ultra-low RDS(on), which reduces power loss and increases efficiency. It also has a fast switching speed, which enables fast load switching and overcurrent protection. The BSS670S2L is suitable for automotive, consumer, and industrial applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description