BST51,135 Allicdata Electronics
Allicdata Part #:

1727-5496-2-ND

Manufacturer Part#:

BST51,135

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN DARL 60V 1A SOT89
More Detail: Bipolar (BJT) Transistor NPN - Darlington 60V 1A 2...
DataSheet: BST51,135 datasheetBST51,135 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.15635
8000 +: $ 0.14556
12000 +: $ 0.14377
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.3W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Base Part Number: BST51
Description

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BST51,135 Application Field and Working Principle

Introduction

BST51,135 is a three-pin NPN tripod bipolar transistor that belongs to the family of discrete transistors. This transistors can handle a maximum power of 250 mW, with a maximum operating temperature of 175°C. It is mostly composed of silicon and germanium, and is widely used in the electronics industry in a wide range of applications such as amplifiers, computers, and other operational sequence and logic circuits.

Basic Structure

BST51,135 is made of a single elemental material, either silicon or germanium, which is semiconductor material. The three pins of the transistor are the base, the collector, and the emitter. This bipolar transistor can act like a switch, allowing electricity to flow from one point to another when electricity is applied to the base of the transistor.

Working Principle

The working principle of BST51,135 is based on the charge carriers that are present in the PN-junction. At the emitter, the holes move towards the collector and the electrons move towards the base. When a negative potential is applied to the base terminal, it helps to block the flow of electrons from the emitter to the collector. The lack of charge carriers decreases the current flow between the emitter and the collector, thus blocking the transistor. When the base terminal is positively charged, the electrons flow from the emitter to the collector and the holes move from the collector to the emitter. The current flowing through the transistor increases and the transistor becomes active. The working principle of BST51,135 is based on the biasing of the PN-junction. The voltage applied to the base produces an electric field, which helps to control the flow of current from the emitter. Thus, BST51,135 facilitates the switching of a high current from the collector to the emitter.

Application Field

BST51,135 has a wide range of applications in the electronics industry. It is mostly used in operational amplifiers, logic circuits, and computers. BST51,135 is also used in radios, TVs, and other electronic equipment. In operational amplifiers, BST51,135 can be used as the input stage to increase the low input current and to allow a high current to pass through the output. It can also act as an amplifier, producing a current gain, as well as helping to produce a voltage gain. In logic circuits, BST51,135 functions as switches to control the current flow. It reduces the complexity of the circuit and increases the efficiency of the design. It is also used in computers and other digital circuits for the same purpose, as it helps to control the current flow through the logic gates, thus making the design of complex circuits easier. In addition to logic circuits and operational amplifiers, BST51,135 is also used in power supplies as a voltage regulator. Voltage drop between the input and output is eliminated with the help of the transistor, which helps to prevent energy wastage.

Conclusion

BST51,135 is a three-pin NPN tripod bipolar transistor that belongs to the family of discrete transistors. This transistors can handle a maximum power of 250 mW, with a maximum operating temperature of 175°C. It is mostly composed of silicon and germanium, and is widely used in the electronics industry in a wide range of applications such as amplifiers, computers, and other operational sequence and logic circuits. It has a working principle based on the biasing of the PN-junction, and is mainly used in operational amplifiers, logic circuits, computers, and power supplies.

The specific data is subject to PDF, and the above content is for reference

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