BST52,115 Allicdata Electronics
Allicdata Part #:

1727-5497-2-ND

Manufacturer Part#:

BST52,115

Price: $ 0.19
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN DARL 80V 1A SOT89
More Detail: Bipolar (BJT) Transistor NPN - Darlington 80V 1A 2...
DataSheet: BST52,115 datasheetBST52,115 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.17252
2000 +: $ 0.15635
5000 +: $ 0.14556
10000 +: $ 0.14377
Stock 1000Can Ship Immediately
$ 0.19
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.3W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Base Part Number: BST52
Description

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BST52,115 transistors are advanced silicon-germanium Bipolar Junction Transistors (BJT). This type of transistor is a single-packaged device with two terminals connected to a single layer of semiconductor material. BJTs are used for a variety of applications, and BST52,115 transistors are one of the most popular choices.

BST52,115 transistors are commonly used as amplifiers or switches in applications ranging from consumer electronics and automotive systems to industrial control systems and aerospace applications. The BST52,115 is particularly well suited for low-noise and high-speed switching, making it an ideal choice for applications that require a small and reliable package.

The working principle of a BST52,115 transistor is based on the principle of the N-P-N junction. This junction is formed by two different materials, one with a higher electrical potential and one with a lower potential. When current is applied to the base electrode, it causes a change in the electric potential of thecollector and emitter junctions, which in turn allows current to flow from the collector to the emitter.

BST52,115 transistors are designed to have a very low on-resistance, which means they can be used at higher switching speeds than most other BJTs. This makes the BST52,115 ideal for high-frequency applications where switching speed and low power consumption and heat dissipation are important considerations. BST52,115 transistors are also well-suited for applications that require high current output, such as motor control and switching power supplies.

BST52,115 transistors also offer excellent temperature stability and long-term reliability. The device is designed to withstand temperature swings of up to 110 degrees C and can also operate in a wide range of ambient temperatures. This makes it an ideal choice for use in high-temperature automotive and industrial applications.

In summary, BST52,115 transistors are advanced silicon-germanium Bipolar Junction Transistors (BJT) used for a variety of applications such as amplifiers, switches, and high-frequency applications. These transistors are designed to have a very low on-resistance and can also operate in a wide range of ambient temperatures, making them well suited for applications that require high current output and temperature stability.

The specific data is subject to PDF, and the above content is for reference

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