Allicdata Part #: | BST52TR-ND |
Manufacturer Part#: |
BST52TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN DARL 80V 0.5A SOT-89 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 80V 500m... |
DataSheet: | BST52TA Datasheet/PDF |
Quantity: | 4000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1.3V @ 500µA, 500mA |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 150mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | BST52 |
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BST52TA is a high-efficiency single-in-line high temperature insulated gate bipolar transistor. It is a type of transistor with a p-type semi-insulating substrate made up of Indium Phosphide and a n-type thin insulation thin layer located on top, where current conduction operations occur. This type of architecture makes it ideal for use in high power applications, with the ability to handle higher power densities. The BST52TA is an ideal choice for applications requiring an insulated gate bipolar transistor with high efficiency.
The BST52TA is an incredibly versatile device, and can be used in many different applications. In the audio industry, it is often used in amplifiers and digital-to-analog converters. It is also used in the semiconductor industry, where it is used in high-end transistor logic capability, including DC-DC converters, voltage-controlled oscillators, and analog-to-digital converters. In the computer industry, the BST52TA can be used in signal processing circuits, such as motherboards and integrated circuits.
The BST52TA is a powerful device capable of delivering high current densities and low switching losses. It is capable of high-speed switching and pulse width modulation, allowing for efficient operation. It also has a robust thermal design, allowing it to operate at high temperatures without compromising performance. In addition to its industrial applications, the BST52TA can also be found in commercially available power management ICs and DC-DC power converters.
The working principle of the BST52TA is based on the principle of bipolar transistors, which rely on controlling the current between two semiconductor regions, called the emitter and the collector. When the base voltage is higher than the emitter voltage, electrons are drawn from the emitter to the collector, creating a current flow. The current is determined by the size of the chip and the amount of current that is supplied to the base voltage.
The BST52TA is an ideal choice for many applications, and is often the preferred power management device for industrial, semiconductor, and consumer applications. Its combination of high efficiency and thermal performance, combined with its robust design, make it an ideal choice for powering various systems that require a robust, efficient transistor. With its ultra-low switching speeds and high current densities, the BST52TA delivers an outstanding solution for data processing and high-power applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BST51TA | Diodes Incor... | 0.0 $ | 1000 | TRANS NPN DARL 60V 0.5A S... |
BST52,135 | Nexperia USA... | 0.18 $ | 1000 | TRANS NPN DARL 80V 1A SOT... |
BST50,115 | Nexperia USA... | 0.19 $ | 1000 | TRANS NPN DARL 45V 1A SOT... |
BST51,115 | Nexperia USA... | 0.19 $ | 1000 | TRANS NPN DARL 60V 1A SOT... |
BST52,115 | Nexperia USA... | 0.19 $ | 1000 | TRANS NPN DARL 80V 1A SOT... |
BST51,135 | Nexperia USA... | 0.18 $ | 1000 | TRANS NPN DARL 60V 1A SOT... |
BST52TA | Diodes Incor... | -- | 4000 | TRANS NPN DARL 80V 0.5A S... |
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