BUB323ZG Allicdata Electronics
Allicdata Part #:

BUB323ZG-ND

Manufacturer Part#:

BUB323ZG

Price: $ 1.74
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 350V 10A D2PAK
More Detail: Bipolar (BJT) Transistor NPN - Darlington 350V 10A...
DataSheet: BUB323ZG datasheetBUB323ZG Datasheet/PDF
Quantity: 1000
1 +: $ 1.57500
50 +: $ 1.33623
100 +: $ 1.13847
500 +: $ 0.93536
1000 +: $ 0.77501
Stock 1000Can Ship Immediately
$ 1.74
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
Power - Max: 150W
Frequency - Transition: 2MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Base Part Number: BUB323
Description

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The BUB323ZG is a NPN silicon epitaxial planar transistors mainly used for amplifier applications. It is specifically designed for use in low frequency, linear, audio and general purpose switching applications. It is suitable for amplifiers and switches requiring up to 100mV peak-to-peak noise reduction, while offering excellent Ic/Vce nominal current gain ranges. The BUB323ZG is a single transistor device with a built-in Darlington configuration, offering high switching and amplifier performance. The device includes a voltage regulator, providing a linear impedance control, enabling the contacts to maintain a low resistance. It also has an integrated heat dissipating package.

The main features of the BUB323ZG are its operation temperature range of -55°C to +150°C; a maximum collector and emitter breakdown voltage of 800V; and a maximum collector and emitter voltage of 800V. It also features a high current gain of 80mA and a maximum collector current of 1A. The device comes in a plastic dual-in-line package (PDIP) form factor, with a large variety of pins and widths for a wide range of applications.

The BUB323ZG is widely used for amplifier applications, as it offers good linearity and high switching performance. It can be used in different circuits to provide high linearity and low noise operations, as well as efficient power management capabilities. Its application fields range from automotive, audio and video, computers and industrial controllers, to telecommunications, RF and satellite communication, and even medical applications. It is also used in switches, circuit protection, heat sinks, and power supplies.

The working principle of the BUB323ZG consists of a NPN silicon epitaxial planar transistor with a Darlington configuration. In this configuration, the base-collector junction of the NPN transistor is connected to the base-emitter junction of the PNP transistor, resulting in an increased current gain. The higher current gain also makes the BUB323ZG a better amplifier, as it can provide more linearity and low noise operation. It also provides an effective heat dissipation for the transistor, protecting it from damage caused by excessively high temperatures.

The BUB323ZG transistor offers excellent switching and linear performance with its high current gain and low noise operations. Its wide application field and well designed package form factor make the device suitable for many applications. Furthermore, its good linearity and low noise operations combined with its excellent heat dissipation make it an ideal choice for amplifiers, switches, RF and satellite communication, and even medical applications.

The specific data is subject to PDF, and the above content is for reference

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