Allicdata Part #: | BUB323ZT4GOSTR-ND |
Manufacturer Part#: |
BUB323ZT4G |
Price: | $ 0.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 350V 10A D2PAK |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 350V 10A... |
DataSheet: | BUB323ZT4G Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.90527 |
1600 +: | $ 0.75007 |
2400 +: | $ 0.69834 |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 350V |
Vce Saturation (Max) @ Ib, Ic: | 1.7V @ 250mA, 10A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 500 @ 5A, 4.6V |
Power - Max: | 150W |
Frequency - Transition: | 2MHz |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Base Part Number: | BUB323 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
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BUB323ZT4G is a general purpose PNP bipolar junction transistor (BJT) that is commonly used in a variety of applications in digital and linear lightweight electronics circuits. It is a part of the small-signal transistor series developed by various manufacturers for use in integrated circuiting.
BUB323ZT4G utilizes an epitaxial planar NPN structure with multiple collector and emitter junctions. It has three pins, each with a specific function. The emitter is the negative terminal and is connected to the current-bearing device. The base is the low-level input voltage that controls the current flow through the device. The collector is the high-level output and is typically connected to the transistor’s current output.
BUB323ZT4G is typically used for switching and amplifying signals in various applications. It has good frequency and temperature stability, making it ideal for low-end applications such as precision timers, on-board controllers, and displays. Additionally, its low power consumption and ability to handle a wide range of voltages make it suited for more power-intensive applications such as television sets and switching power supplies. In addition, its small size and low drop-out voltage make it ideal for space-constrained devices such as PDAs, mobile phones, and laptops.
The working principle behind BUB323ZT4G is based on the “Boltzmann Inversion” method. This method utilizes the differential voltage between the emitter-base and the collector-base, as well as the current gain alpha, to produce a current pulse in the “on” state. The current pulse is then amplified further by a suitable emitter follower and is converted back to a digital signal in the “off” state. The adaptability of the BUB323ZT4G PNP transistor makes it ideal for switching and amplifying applications. It can operate in both switched and linear modes, enabling easy control of current flow.
In conclusion, BUB323ZT4G is a versatile general purpose PNP transistor that is commonly used as a switching and amplifying device in lightweight digital and linear circuits. With its ability to handle a wide range of voltages and temperatures, as well as its low power consumption, it is ideal for use in various applications such as timers, displays, and power supplies. Additionally, it utilizes a reliable “Boltzmann Inversion” method to effectively amplify current pulses, making it an efficient and reliable choice.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BUB323ZT4 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 350V 10A D... |
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BUB323ZT4G | ON Semicondu... | 0.99 $ | 1000 | TRANS NPN DARL 350V 10A D... |
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