Allicdata Part #: | BUB323ZT4OS-ND |
Manufacturer Part#: |
BUB323ZT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 350V 10A D2PAK |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 350V 10A... |
DataSheet: | BUB323ZT4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 350V |
Vce Saturation (Max) @ Ib, Ic: | 1.7V @ 250mA, 10A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 500 @ 5A, 4.6V |
Power - Max: | 150W |
Frequency - Transition: | 2MHz |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Base Part Number: | BUB323 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUB323ZT4 is a common bipolar n-p-n junction transistor that is used in many applications. It is a low-power, high-frequency, low-noise amplifier with low distortion. It is also used in switching and linear applications, including general-purpose audio, video, and RF signal applications.
In terms of its physical characteristics, the BUB323ZT4 has a maximum collector power dissipation of 900mW. It also has a maximum allowable collector-emitter voltage of 25V and a maximum collector current of 850mA. The transition frequency is 200MHz, the amplification factor is 180, the noise figure is 3.4dB, and the storage temperature range is -65°C to 150°C.
The BUB323ZT4 is a small-signal switched; i.e. it turns on and off quickly in response to a small electrical signal. It also has a low-gain response: The amplification of the transistor is low, but it is better than that of a resistor. With a low-gain response, the transistor can accurately amplify the input signal without distorting it.
The main application of the BUB323ZT4 is in the fields of audio, video, and RF applications, as well as linear applications. It can be used to amplify audio and video signals for broadcast, as well as for amplification of radio frequency signals. In linear applications, the BUB323ZT4 can also be used for amplification of small signals, such as those from sensors or from digital circuits.
In terms of its working principle, the BUB323ZT4 has three main elements: the base, collector, and emitter. As current passes through the transistor, the base-emitter junction is forward-biased, and the collector-base junction is reverse-biased. This creates a small electric field between the base and emitter, which results in a current gain as the transistor switches on and off quickly. The collector current is amplified by the amount determined by the transistor’s gain.
The BUB323ZT4 is a versatile, low-power, high-frequency, low-noise transistor, with a wide application range. It is a popular choice for projects that require fast, low-noise switching in audio, video, and RF signals, as well as linear applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BUB323ZT4 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 350V 10A D... |
BUB323Z | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 350V 10A D... |
BUB323ZT4G | ON Semicondu... | 0.99 $ | 1000 | TRANS NPN DARL 350V 10A D... |
BUB323ZG | ON Semicondu... | 1.74 $ | 1000 | TRANS NPN DARL 350V 10A D... |
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
TRANS PNP 140V 1ABipolar (BJT) Transisto...
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...