BUJ302AX,127

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A BUJ302AX-127 is a high power NPN silicon epitaxial planar Darlington transistor. It can be used in almost any circuit that requires an efficient switching device. This transistor is popular in digital applications and can be used to drive a large load current. It is also used in switching audio applications, linear mode power amplifiers, audio power amplifiers and in general purpose applications.

The BUJ302AX-127 is a high power NPN silicon epitaxial planar Darlington transistor and it’s comprised of two transistors connected together. The first transistor is a standard NPN bipolar junction transistor (BJT), which is made up of a base, collector and emitter. The BJT can amplify current, meaning it has the ability to source and sink current. The second transistor is an NPN Darlington transistor. Both transistors are connected together in a “Darlington” configuration, meaning the small current from the first transistor is amplified by the second transistor to increase the overall current flowing from the collector to the emitter. This Darlington configuration is referred to as a high-power, high-current amplification device.

The BUJ302AX-127 is a high power NPN device that is housed in a TO-220 package. It has a maximum collector current of 8A and a maximum continuous collector current of 4A. The device also has a maximum emitter-base voltage of 5V and a maximum collector-emitter voltage of 40V. The breakdown voltage is specified at ±25V. The maximum collector-emitter saturation voltage is 1V and the device has a healthy power dissipation of 95W.

The BUJ302AX-127 is designed for applications in which high power and current amplification is required. It is most commonly used in audio power amplifiers, linear mode amplifiers and in switching audio applications. It can also be used in motor controls, timer circuits, power supply circuits and general purpose applications.

The BUJ302AX-127 is designed to operate at a voltage of 12V or higher and at a frequency of up to 1.2MHz. It is ideal for high power output in linear and audio applications, as well as low noise applications. The device has a maximum collector-emitter saturation voltage of 1V and a higher saturation voltage than other similar transistors.

The BUJ302AX-127 has several advantages over other transistors. It provides high power (95W) in a small package and is able to switch a large load current. It also has an open collector mode that is capable of sourcing a very high current. The device also has an extremely low collector-emitter saturation voltage.

The BUJ302AX-127 is a high power NPN silicon epitaxial planar Darlington transistor. It can be used for a wide range of applications in which efficient switching and power amplification is required. The device is capable of switching high load currents and has a saturation voltage of 1V. It is popular in audio power amplifiers, linear mode applications, switching applications and general purpose applications.

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