Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	6A
Voltage - Collector Emitter Breakdown (Max):	800V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 1.33A, 4A
Current - Collector Cutoff (Max):	250µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	18 @ 700mA, 5V
Power - Max:	110W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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BUL416T Application Field and Working Principle

Introduction

BUL416T is a type of transistor manufactured by STMicroelectronics. It is a bipolar junction transistor (BJT) that belongs to the category of single transistors. It comes in an ultra-miniature plastic to-92 package type with its leads oriented perpendicularly. It can be used in a wide range of applications, including analogue and digital files, such as logic circuits, amplifiers, and switching.

Applications

Due to its UL-recognized insulation and low-on-resistance, it has a variety of applications. In logic circuits, it is used in high-speed gates, logic levels, and buffers. In amplifiers, it can be used to amplify high-frequency signals in radio receivers, colour television circuits, and amplifiers. In switching applications, it can be used in applications requiring high switching speeds, such as PCM modules and power switching.

Design and Performance

The BUL416T is constructed using epitaxial silicon technology. It has a PNP bipolar structure and can operate effectively in temperatures between -55°C and +150°C. It features a low collector-emitter saturation voltage (Vce(sat), of 0.4V at a collector current of 10mA and an hFE of 20 to 200. The cutoff frequency (fT) of the BUL416T is also relatively high, approximately 150MHz.

Working Principle

The BUL416T is a type of current-controlled device, which means it is controlled by a small current injected into the base, and the resulting current gain of the transistor is dependant upon the number of carriers injected into the base as well as the ensuing shape of the depletion region.The BUL416T works by allowing the electrons to flow from the emitter to the collector, in the same fashion as a diode, with the current gain of the transistor based upon the number of electrons injected into the base. The current gain is determined by the HFE (hFE), which is a measure of how much current is amplified in the common emitter configuration. The amplification of the current is what is referred to as the current gain of the transistor.In the BUL416T, when a small current is injected into the base, it triggers a large current at the collector and this produces an amplified signal. This is due to the electron current from the base toemitter and the collector-to-emitter current being proportional to the current injected into the base. This amplified signal is then passed on to the load.

Conclusion

The BUL416T is a type of transistor manufactured by STMicroelectronics. It belongs to the category of single transistors and is able to perform efficiently in both analogue and digital applications. It is highly useful in applications requiring high frequency signals and low-on-resistance, making it a popular choice for many electronic engineers. Furthermore, its working principle is based on the principle of current-controlled devices and its current gain is determined by the HFE value.

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