BUL45

Series:	SWITCHMODE™
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	400V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 400mA, 2A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	14 @ 300mA, 5V
Power - Max:	75W
Frequency - Transition:	12MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Base Part Number:	BUL45

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Introduction

The BUL45 is a general-purpose series of NPN bipolar junction transistors (BJT). It is a type of three-terminal semiconductor device used as an amplifying or switching device. This type of transistor has two p-type and one n-type layers. The combination of two p-type and one n-type layer allots these transistors with the potential of high current amplification as well as long-term stability. The BUL45 also has an exceptionally low saturation voltage, high current capacity, and low power dissipation and is ideal for switching, amplifying, and logic applications.

Application Field

Due to their unique physical characteristics, BUL45 transistors can be used in a wide variety of electrical and electronic devices. These devices are used in high-current applications such as power supplies, motor controllers and medical applications. Their broad application range also includes automotive and consumer electronics, such as audio amplifiers and portable devices. Additionally, some industrial applications, especially those relying on switching, also tend to use these transistors.The BUL45 transistor has widespread usage in switching and amplification applications because of the low voltage and current required for the transistor to transition from the saturated to the non-saturated stage.

Work Principle

The BUL45 operates in three different states based on the level of current that passes through its terminals: cut-off, saturation and linear. The cut-off state occurs when the transistor is at its maximum resistance, meaning no current can flow through, while in the saturation state, the transistor is at its lowest resistance, allowing maximum current flow through. The linear state is the in-between of the two, when the transistor acts as an amplifier.When in saturation, the n-type layer is subjected to a bias voltage, creating a thin layer of attractive electrons in the n-type layer. This generates an electric field which causes electrons to move between the two p-type layers and into the n-type layer to fill the holes left by injected electrons from the base. This process is called injection, and it is responsible for the low voltage and current requirements of the BUL45. The saturation state of the BUL45 transistor also has a low-voltage drop, meaning that when current flows through the transistor, a low voltage is maintained between the output and the collector terminals. This allows for greater efficiency and power savings.

Conclusion

In conclusion, the BUL45 is a type of three-terminal semiconductor device used as an amplifying or switching device. It has an exceptionally low saturation voltage, high current capacity, and low power dissipation which makes it ideal for switching and amplification applications. Its distinct physical characteristics make it suitable for many electrical and electronic devices, particularly high-current applications and consumer electronics. Moreover, the BUL45 also operates in three different states - cut-off, saturation and linear - each of which are made possible by electron injection into the n-type layer.

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