Allicdata Part #: | BUL49DFP-ND |
Manufacturer Part#: |
BUL49DFP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 450V 5A TO-220FP |
More Detail: | Bipolar (BJT) Transistor NPN 450V 5A 34W Through ... |
DataSheet: | BUL49DFP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 450V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 800mA, 4A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 4 @ 7A, 10V |
Power - Max: | 34W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
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BUL49DFP is a single bipolar junction transistor (BJT) used in a wide range of switching, amplifier, and logic circuit designs. It is a three-layer semiconductor device consisting of a collector, base, and emitter, connected via p-n junction in such a way as to create an open electrical path between the collector and emitter when the base terminal is not biased. The bipolar junction transistor is the most common type of field effect transistor (FET) found in most modern electronics. It is used as either an amplifier or switch in a wide range of applications, including digital logic circuits.
The BUL49DFP is a low-voltage, bipolar junction transistor that operates at voltages as low as 5volts, allowing for efficient operation even in noisy electrical environments. It has an collector-to-emitter voltage limit of 30 volts and a maximum collector current of 20mA, making it well-suited for amplifier and switching applications. Its low-voltage operation along with its high current and low power consumption makes it highly suitable for many low-voltage, high-amplitude circuits.
The BUL49DFP is also commonly known as an NPN transistor due to its construction; the N stands for N-type semiconductor material, while the P stands for P-type material. The transistor works on the principle of the current flow between a base and emitter flowing through a semiconductor material. The current flow through the semiconductor is measured using the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) concept.
The BUL49DFP can be used as either a switching device or amplifier, operating with only moderate precision. The typical bandgap and junction capacitance are low, meaning that the transistor can remain in one state or the other with little interference from other transistors in the circuit. When operating as an amplifier, the BUL49DFP can provide a moderate amount of current amplification, usually around 20dB. This allows for the use of this transistor in both amplifier and switching designs.
The BUL49DFP transistor is well suited for low-voltage, high-amplitude circuits, such as those found in relay switches, solid-state relays, logic gates, and amplifier circuits. This makes the BUL49DFP a popular choice for many industrial control and automation applications, allowing for efficient and cost-effective operation. The transistor can also be used in switching applications, particularly those with high-powered loads, due to its low voltage and current requirements.
In conclusion, the BUL49DFP transistor is a widely available and widely used, low-voltage, high-amplitude transistor suitable for a wide range of circuit design applications. It has low power consumption, a moderate gain, and low on-state current requirements, making it a great choice for many applications where efficiency and cost-effectiveness is a concern. While not suitable for ultra-low-power or ultra-high-current circuits, its versatility and low cost makes it well-suited for many commonly encountered applications, such as logic gates, amplifiers, and relays.
The specific data is subject to PDF, and the above content is for reference
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