BUL741FP Allicdata Electronics
Allicdata Part #:

497-12454-5-ND

Manufacturer Part#:

BUL741FP

Price: $ 0.89
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 400V 2.5A TO-220FP
More Detail: Bipolar (BJT) Transistor NPN 400V 2.5A 30W Throug...
DataSheet: BUL741FP datasheetBUL741FP Datasheet/PDF
Quantity: 68
1 +: $ 0.80640
10 +: $ 0.71820
Stock 68Can Ship Immediately
$ 0.89
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 2.5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 2A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 450mA, 3V
Power - Max: 30W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Description

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Transistors are essential for the construction of modern electronics. They can be divided into two categories, unipolar and bipolar transistors. Bipolar transistors, or BJTs, consist of two p-n junctions connected together in a single device, making them ideal for applications such as amplifying and switching. The BUL741FP is a single-type bipolar junction transistor that is designed specifically to achieve high-performance in both linear and switching applications. In this article, we will explore the BUL741FP\'s application field, as well as its working principle.

The BUL741FP is a high-performance, low-noise, NPN silicon-planar-epitaxial-transistor designed specifically for use in linear and switching applications. The device has a typical beta of 300, a maximum collector-emitter voltage rating of 40V, and a collector current rating of up to 200ma in saturation. The device is housed in a TO-220AB package, which provides excellent thermal dissipation and easy mounting. As a result, the BUL741FP is ideal for applications such as audio amplifying, audio pre-amplifying circuit, wide band amplifying circuit and low-noise amplifying.

In addition to its linear and switching applications, the BUL741FP is also suitable for high-speed switching and general-purpose switching. The device has a high-speed switching time of 35ns, making it well-suited for high-speed switching applications. As a result, the BUL741FP is ideal for use in applications such as communications systems and automotive electronics.

The working principle of the BUL741FP is quite simple. The device consists of two p-n junctions connected together in a single device. The NPN transistor is fabricated using the double-diffused silicon-epitaxial-base process. This process produces a planar surface, which increases the frequency response of the transistor. The two junctions enable the device to amplify signals, as well as switch currents. In addition, the device offers good high-voltage and high-current capabilities.

The BUL741FP is an ideal choice for applications that require high-performance, low-noise transistors. The device provides excellent thermal dissipation and a wide variety of operational characteristics that make it suitable for both linear and switching applications. As a result, the BUL741FP is well-suited for applications such as audio amplifying, audio pre-amplifying circuit, wide band amplifying circuit and low-noise amplifying.

The specific data is subject to PDF, and the above content is for reference

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