
Allicdata Part #: | 497-3130-5-ND |
Manufacturer Part#: |
BUL742A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 400V 4A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN 400V 4A 70W Through ... |
DataSheet: | ![]() |
Quantity: | 1972 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 1A, 3.5A |
Current - Collector Cutoff (Max): | 250µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 16 @ 800mA, 3V |
Power - Max: | 70W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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The BUL742A is a type of single, bipolar junction transistor (BJT), also known as a hybrid integrated circuit. The BUL742A is composed of a PNP transistor, a base-to-gate earphone, and a rectifier circuit. It is primarily used in high voltage, low-power switching and amplifying applications, such as audio amplifiers, voltage controlled oscillators (VCOs), radio receivers and transmitters, and low-cost, low-power low-frequency amplifiers. This hybrid integrated circuit offers excellent power dissipation, high gain, and high input and output impedance.
The BUL742A utilizes a PNP bipolar junction transistor (BJT) as its workhorse, which is formed by two semiconductor materials doped with electrons (N-type) and holes (P-type). In addition to the transistor, the device also incorporates two integrated circuits on the same chip: a forward rectifier circuit and a base-to-gate resistor. The base-to-gate resistor helps in biasing the base and operating the device, while the rectifier circuit prevents any reverse flow of current through the BUL742A.
The input and output of the BUL742A, which are coupled using the internal emitter-base junction and collector-base junction, exhibit high-impedance levels. This helps to prevent the BUL742A from being overloaded in high-frequency applications. Additionally, the device can handle large amounts of current due to its low voltage drop; this is known as power dissipation.
The BUL742A has an adjustable gain and can operate at frequencies of up to 400kHz. It can provide amplification up to 10V. The maximum DC voltage rating for the collector-to-emitter is 80V, the collector-to-base is 100V, and the emitter-to-base is 60V.
The working principle of the BUL742A is relatively simple. In order for current to flow, the base-emitter junction must be forward biased, either through an external base bias or by providing a base current. When current is applied to the base, both the emitter and collector will conduct until the device\'s gain is saturated, eventually limiting the current flow. The device can be operated in both common emitter and common collector arrangements. The output of the device will be taken from either the collector or the emitter depending on the configuration chosen.
The BUL742A is an ideal choice when a low-voltage, low-power, high-frequency amplifier or oscillator is needed. The device is widely used in audio amplifiers, VCOs, radio receivers and transmitters, and low-cost, low-frequency amplifiers. It is also relied upon for high-voltage, low-power switching applications, such as in automotive electronics and industrial control systems.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
BUL742A | STMicroelect... | -- | 1972 | TRANS NPN 400V 4A TO-220B... |
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