BUL770-S Allicdata Electronics
Allicdata Part #:

BUL770-S-ND

Manufacturer Part#:

BUL770-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS NPN 400V 2.5A
More Detail: Bipolar (BJT) Transistor NPN 400V 2.5A 50W Throug...
DataSheet: BUL770-S datasheetBUL770-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 2.5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 160mA, 800mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 7 @ 800mA, 1V
Power - Max: 50W
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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The BUL770-S is a type of bipolar junction transistor (BJT) that is used for a variety of applications. It is a single transistor and so it is able to provide high gain, low distortion, and excellent linearity. It is also available in a wide range of packages, making it suitable for a range of applications.

One of the main applications for the BUL770-S is audio amplification. The transistor provides high gain and low distortion, making it ideal for audio applications. It is also capable of providing excellent linearity, ensuring that the sound is accurate and provides the expected quality.

Another common application is in motor control. The BUL770-S is able to provide a high current gain, allowing it to operate at lower duty cycles. This makes it well-suited for applications such as stepping motors, brushless DC motors, and other motorized applications.

The BUL770-S is also useful in digital applications. The transistor provides a high switching speed, allowing it to be used for high speed switching in digital circuits. Additionally, the low power consumption of the transistor makes it well-suited for low power applications.

The BUL770-S is capable of operating over a wide range of temperatures and voltages, making it a versatile device for a variety of environments. Additionally, the packaging of the device is designed for easy installation, ensuring that all the necessary connections are easy to make.

The BUL770-S uses a Bipolar Junction Transistor as the active element. A BJT consists of three sections: an emitter, a collector, and a base. The collector and emitter are both semi-conductors, while the base is insulated from the other two. The BJT operates by having the emitter send electrons to the collector. This process is called the forward current gain, which is the main function of the transistor.

The base of the transistor is necessary to control the flow of electrons. By applying a voltage to the base, the transistor will be switched on and the electrons will flow between the emitter and collector. By adjusting the base current, the flow of electrons can be changed, which allows the transistor to act as an amplifier or switch.

The working principle of the BUL770-S is similar to that of any other transistor. It is capable of amplifying current and switching current, making it a versatile device for a variety of applications. Additionally, the device is designed for easy installation and wide compatibility, making it suitable for a range of environments.

The specific data is subject to PDF, and the above content is for reference

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