Allicdata Part #: | BYM12-400-E3/96GITR-ND |
Manufacturer Part#: |
BYM12-400-E3/96 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 1A DO213AB |
More Detail: | Diode Standard 400V 1A Surface Mount DO-213AB |
DataSheet: | BYM12-400-E3/96 Datasheet/PDF |
Quantity: | 1000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 14pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | BYM12-400 |
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The BYM12-400-E3/96 diode rectifier is a single diode rectifier commonly used in electronic circuits. It is part of the bridge rectifier family, which also includes dual rectifier diodes that offer improved performance and features.
This diode rectifier offers low forward voltage drop and high reverse leakage current. The BYM12-400-E3/96 is a standard fringing field effect (FFE) device, meaning it uses a metal-oxide-semiconductor field-effect transistor (MOSFET) to control the flow of current through it. This technology allows the device to maintain lower forward voltage drops, as well as provide improved reverse recovery characteristics.
BYM12-400-E3/96 diode rectifier has a maximum forward current of 400mA and a reverse leakage current of 12mA. It operates over a wide voltage range, from 25v to 1000v, and remains operational in temperatures up to 125°C. The device is rated for up to 600mW power.
Applications of BYM12-400-E3/96 diode rectifier include power supply circuits, motor drives and power electronics, motor drivers, converter circuits, switching regulators, and circuits requiring voltage clamping. The device is also frequently used as a protection diode for high-speed switching applications.
The working principle of the BYM12-400-E3/96 is based on two distinct regions, the anode and the cathode. When the input voltage is applied to the anode, it becomes reversed biased, meaning that it repels the current. This means there is a potential barrier created between the anode and the cathode, preventing current flow. Once the input voltage exceeds the barrier potential, the anode and the cathode become forward biased, allowing current flow.
The field effect transistor (FET) is responsible for controlling the current flow in the BYM12-400-E3/96 diode rectifier. When the diode is reverse biased, the FET is opened, allowing the diode to block current flow. Once the input voltage to the anode of the diode exceeds the barrier potential, the FET is closed, allowing current to flow from the anode to the cathode. This current then passes through the circuit.
The BYM12-400-E3/96 diode rectifier is a single device, designed for use in a variety of applications. It is a robust device capable of withstanding high temperatures and operating over a wide voltage range. Additionally, its low forward-voltage drop and reverse leakage current make it suitable for both power supply circuits and protection circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BYM10-1000-E3/96 | Vishay Semic... | -- | 42000 | DIODE GEN PURP 1KV 1A DO2... |
BYM10-400-E3/96 | Vishay Semic... | -- | 16500 | DIODE GEN PURP 400V 1A DO... |
BYM12-200-E3/96 | Vishay Semic... | -- | 3000 | DIODE GEN PURP 200V 1A DO... |
BYM13-60-E3/96 | Vishay Semic... | -- | 10500 | DIODE SCHOTTKY 60V 1A DO2... |
BYM10-50-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
BYM10-200-E3/96 | Vishay Semic... | 0.08 $ | 4500 | DIODE GEN PURP 200V 1A DO... |
BYM10-100-E3/96 | Vishay Semic... | -- | 1500 | DIODE GEN PURP 100V 1A DO... |
BYM10-50-E3/96 | Vishay Semic... | -- | 4500 | DIODE GEN PURP 50V 1A DO2... |
BYM11-1000-E3/96 | Vishay Semic... | -- | 13500 | DIODE GEN PURP 1KV 1A DO2... |
BYM10-100-E3/97 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
BYM11-600-E3/97 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
BYM11-600-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
BYM11-800-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
BYM13-20-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM13-20HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM13-30-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-30HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-40-E3/97 | Vishay Semic... | 0.16 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-40HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-50-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 50V 1A DO2... |
BYM13-50HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 50V 1A DO2... |
BYM13-60-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 60V 1A DO2... |
BYM13-60HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 60V 1A DO2... |
BYM13-20HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM13-30HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-40HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-50HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 50V 1A DO2... |
BYM13-60HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 60V 1A DO2... |
BYM13-40-E3/96 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-30-E3/96 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-20-E3/96 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM11-1000HE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
BYM11-800HE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
BYM12-100HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
BYM12-150HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
BYM12-200HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYM12-300HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
BYM12-400HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYM12-50HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
BYM10-1000-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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