Allicdata Part #: | 1740-1154-ND |
Manufacturer Part#: |
BYQ28E-200E,127 |
Price: | $ 0.47 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | WeEn Semiconductors |
Short Description: | DIODE ARRAY GP 200V 10A TO220AB |
More Detail: | Diode Array 1 Pair Common Cathode Standard 200V 10... |
DataSheet: | BYQ28E-200E,127 Datasheet/PDF |
Quantity: | 1066 |
1 +: | $ 0.42210 |
10 +: | $ 0.37107 |
100 +: | $ 0.28451 |
500 +: | $ 0.22491 |
1000 +: | $ 0.17993 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io) (per Diode): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Operating Temperature - Junction: | 150°C (Max) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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.Diodes - Rectifiers - Arrays
The BYQ28E-200E,127 diodes is a type of device within the range of diodes and rectifier arrays, which are devices created to regulate current and control the flow of electricity from one output channel to another through a series of semiconductor layers. This article will take a lookat their application fields and describe the working principle of BYQ28E-200E,127 diodes.
Application Fields of BYQ28E-200E,127 Diodes
The BYQ28E-200E,127 diodes are designed to provide high precision, high quality electrical and mechanical performance in a broad range of applications, ranging from high voltage radio transmitters to audio systems and car electronics. They are suitable for signal protection, surge protection, and are also ideal for battery protection in circuit design. Moreover, they can be used in airplanes, high speed trains, and other forms of transportation that require a reliable, low noise signal.
The BYQ28E-200E,127 diodes are typically used for switching applications, such as pulse modulation and pulse width modulation, or for providing power supply isolation and power line isolation. They also serve as ESD (electrostatic discharge) protection devices, where they help to divert electric charge away from sensitive components. Additionally, they are capable of operating at very high frequencies, meaning that they can be used for RF (radio frequency) applications.
Working Principle of BYQ28E-200E,127 Diodes
The BYQ28E-200E,127 diodes are based on Next Generation Silicided Emitter Reverse Blocking Technology (NGSRBT). This technology strives to make semiconductor layers as efficient as possible, allowing them to operate with higher voltage levels and faster switching times. As a result, the BYQ28E-200E,127 diodes achieve a high reverse blocking capability, making them suitable for applications involving high voltages and short conduction times.
The BYQ28E-200E,127 diodes are designed to operate within their minimum reverse voltage of 950V and their maximum reverse voltage of 1000V. In order to ensure that the devices operate within their specified voltages and limitations, the BYQ28E-200E,127 diodes are subjected to rigorous stress tests, including HVIL (High Voltage Insulation Level) and Hi-Pot (High Potential) testing.
BYQ28E-200E,127 diodes use a number of different techniques to achieve their high efficiency, including multi-layer designs, electron beam welding, and extremely tight fabrication processes. The combination of these techniques ensures that the BYQ28E-200E,127 diodes can safely operate within their specified voltage limits and provide ultimate performance.
Conclusion
The BYQ28E-200E,127 diodes are an advanced diode and rectifier array, which are used for a wide range of applications ranging from radio transmitters to audio systems and car electronics. They are based on Next Generation Silicided Emitter Reverse Blocking Technology (NGSRBT), which allows them to operate with higher voltage levels and faster switching times, making them suitable for applications involving high voltages and short conduction times. Finally, BYQ28E-200E,127 diodes are subjected to rigorous stress tests to ensure they can safely operate within their specified voltage limits and provide the ultimate performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BYQ28X-200,127 | WeEn Semicon... | 0.0 $ | 1000 | DIODE ARRAY GP 200V 10A T... |
BYQ28E-200-E3/45 | Vishay Semic... | -- | 180 | DIODE ARRAY GP 200V 5A TO... |
BYQ28ED-200,118 | WeEn Semicon... | 0.21 $ | 2500 | DIODE ARRAY GP 200V 10A D... |
BYQ28E-200E,127 | WeEn Semicon... | 0.47 $ | 1066 | DIODE ARRAY GP 200V 10A T... |
BYQ28E-200/H,127 | WeEn Semicon... | 0.49 $ | 4988 | DIODE ARRAY GP 200V 10A T... |
BYQ28E-200,127 | WeEn Semicon... | 0.49 $ | 2663 | DIODE ARRAY GP 200V 10A T... |
BYQ28ED-200PLJ | WeEn Semicon... | 0.16 $ | 1000 | BYQ28ED-200PLJ/TO252/Q1/T... |
BYQ28E-100-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE ARRAY GP 100V 5A TO... |
BYQ28E-150-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
BYQ28EF-100-E3/45 | Vishay Semic... | 0.48 $ | 1000 | DIODE ARRAY GP 100V 5A IT... |
BYQ28EF-100HE3/45 | Vishay Semic... | 0.48 $ | 1000 | DIODE ARRAY GP 100V 5A IT... |
BYQ28EF-150-E3/45 | Vishay Semic... | 0.48 $ | 1000 | DIODE ARRAY GP 150V 5A IT... |
BYQ28EF-150HE3/45 | Vishay Semic... | 0.48 $ | 1000 | DIODE ARRAY GP 150V 5A IT... |
BYQ28EF-200-E3/45 | Vishay Semic... | -- | 1000 | DIODE ARRAY GP 200V 5A IT... |
BYQ28EB-100HE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE ARRAY GP 100V 5A TO... |
BYQ28EB-150HE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
BYQ28EB-200HE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE ARRAY GP 200V 5A TO... |
BYQ28EF-200HE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE ARRAY GP 200V 5A IT... |
BYQ28EB-100-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE ARRAY GP 100V 5A TO... |
BYQ28EB-150-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
BYQ28EB-200-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE ARRAY GP 200V 5A TO... |
BYQ28EB-100HE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE ARRAY GP 100V 5A TO... |
BYQ28EB-150HE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
BYQ28EB-200HE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE ARRAY GP 200V 5A TO... |
BYQ28E-100HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 100V 5A TO... |
BYQ28E-150HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
BYQ28E-200HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 200V 5A TO... |
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