Allicdata Part #: | BYQ28EF-150-E3/45-ND |
Manufacturer Part#: |
BYQ28EF-150-E3/45 |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY GP 150V 5A ITO220AB |
More Detail: | Diode Array 1 Pair Common Cathode Standard 150V 5A... |
DataSheet: | BYQ28EF-150-E3/45 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.43280 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io) (per Diode): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 10µA @ 150V |
Operating Temperature - Junction: | -40°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | ITO-220AB |
Description
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.<h2>Diodes - Rectifiers - Arrays</h2><p>BYQ28EF-150-E3/45 is a type of graphite and alloy stack up power semiconductor device commonly used in rectifying and switching applications. It is a three phase rectification device optimized for high power inverter and motor control circuits. The BYQ28EF-150-E3/45 semiconductor is composed of a silicon layer, graphite layer, and alloy layer. The graphite layer serves to reduce the thermal transport resistance across the device structure, while the alloy layer provides electrical insulation.</p><h3>Application Field</h3><p>The power semiconductor device is designed for high power inverters, motor controllers, and other power switching applications. BYQ28EF-150-E3/45 can be used to replace all types of conventional three-phase rectification devices, such as thyristors, silicon-controlled rectifiers (SCRs), and gate turn-off thyristors (GTOs). It can operate in both zero- and soft-switching topologies and is ideal for applications operating at frequencies ranging from several hundred hertz to several kHz.</p><p>The BYQ28EF-150-E3/45 is also well suited for applications in power converters, voltage regulators, and in motor controllers with high switching frequency operations, such as electric vehicle (EV) chargers, uninterruptible power supplies (UPS), renewable energy systems (solar and wind), adjustable speed drives (ASDs), motor drives, electromagnetic braking systems, and frequency inverters.</p><h3>Working Principle</h3><p>The BYQ28EF-150-E3/45 three-phase rectifier device operates according to a diode-clamp circuit topology. It consists of three separate high current rectifier diodes connected in parallel to each of the three input lines. The current-voltage characteristics are similar to those of a standard diode rectifier, but with a higher overall blocking capability.</p><p>When no voltage is applied to the input, the three diodes are reverse-biased. Upon application of a voltage, current can flow through the forward biased diode to the output, thereby allowing power to be transferred. During the operation of the device, the internal temperature can be kept low by controlling the current flow through the graphite layer. This allows for operation at higher frequencies and switching rates with improved efficiency. The BYQ28EF-150-E3/45 can also be used in combination with other components, such as gate drivers and capacitors, to achieve better performance.</p>The specific data is subject to PDF, and the above content is for reference
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BYQ28EB-150-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
BYQ28EB-200-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE ARRAY GP 200V 5A TO... |
BYQ28EB-100HE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE ARRAY GP 100V 5A TO... |
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BYQ28E-100HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 100V 5A TO... |
BYQ28E-150HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
BYQ28E-200HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 200V 5A TO... |
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