Allicdata Part #: | BYQ28EF-200-E3/45-ND |
Manufacturer Part#: |
BYQ28EF-200-E3/45 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY GP 200V 5A ITO220AB |
More Detail: | Diode Array 1 Pair Common Cathode Standard 200V 5A... |
DataSheet: | BYQ28EF-200-E3/45 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io) (per Diode): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Operating Temperature - Junction: | -40°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | ITO-220AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BYQ28EF-200-E3/45 range of diode rectifier arrays provide enhanced performance and safety benefits compared to standard rectifier diodes. Suitable for use in a wide range of applications, they offer superior levels of efficiency that can help reduce power losses, while their small size and low weight mean they can be integrated into a wide range of devices.
The BYQ28EF-200-E3/45 consists of two slices of silicon mounted between two copper conduction plates. The slices are arranged in a parallel configuration and held together with a copper plate on each side. This combination of copper and silicon creates a highly efficient heat sinking effect, resulting in improved efficiency and a longer working life.
The BYQ28EF-200-E3/45 can be used in a wide range of applications, such as power supplies and power management systems. The device is designed to provide high-speed switching, reduced power losses and a more efficient operation. Using a fast switching technique, it is capable of avoiding diode-damaging conditions like thermal runaway, thus protecting the system from excessive heat.
The BYQ28EF-200-E3/45\'s working principle is based on the PN junction principle. The device consists of two layers of semiconducting material, one positively charged, or P-type, and one negatively charged, or N-type. When electrical current is applied to the device, the P-type layer attracts negatively charged electrons and the N-type layer attracts positively charged holes. This creates a barrier, or PN junction, where the charge carriers can no longer pass.
The PN junction is what allows the BYQ28EF-200-E3/45 to function as a diode and control the flow of electricity. When the voltage across the PN junction exceeds the breakdown voltage, current will flow, the rectification effect will take place and the junction will become forward-biased. This allows current to flow one way, enabling rectification.
The BYQ28EF-200-E3/45\'s fast switching technique and enhanced heat dissipation make it an ideal choice for a range of applications. Due to its efficiency, the device is perfect for applications that require power management or require high speed switching. Additionally, its small size and light weight makes it a great choice for integrating into mobile devices or other small systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BYQ28X-200,127 | WeEn Semicon... | 0.0 $ | 1000 | DIODE ARRAY GP 200V 10A T... |
BYQ28E-200-E3/45 | Vishay Semic... | -- | 180 | DIODE ARRAY GP 200V 5A TO... |
BYQ28ED-200,118 | WeEn Semicon... | 0.21 $ | 2500 | DIODE ARRAY GP 200V 10A D... |
BYQ28E-200E,127 | WeEn Semicon... | 0.47 $ | 1066 | DIODE ARRAY GP 200V 10A T... |
BYQ28E-200/H,127 | WeEn Semicon... | 0.49 $ | 4988 | DIODE ARRAY GP 200V 10A T... |
BYQ28E-200,127 | WeEn Semicon... | 0.49 $ | 2663 | DIODE ARRAY GP 200V 10A T... |
BYQ28ED-200PLJ | WeEn Semicon... | 0.16 $ | 1000 | BYQ28ED-200PLJ/TO252/Q1/T... |
BYQ28E-100-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE ARRAY GP 100V 5A TO... |
BYQ28E-150-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
BYQ28EF-100-E3/45 | Vishay Semic... | 0.48 $ | 1000 | DIODE ARRAY GP 100V 5A IT... |
BYQ28EF-100HE3/45 | Vishay Semic... | 0.48 $ | 1000 | DIODE ARRAY GP 100V 5A IT... |
BYQ28EF-150-E3/45 | Vishay Semic... | 0.48 $ | 1000 | DIODE ARRAY GP 150V 5A IT... |
BYQ28EF-150HE3/45 | Vishay Semic... | 0.48 $ | 1000 | DIODE ARRAY GP 150V 5A IT... |
BYQ28EF-200-E3/45 | Vishay Semic... | -- | 1000 | DIODE ARRAY GP 200V 5A IT... |
BYQ28EB-100HE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE ARRAY GP 100V 5A TO... |
BYQ28EB-150HE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
BYQ28EB-200HE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE ARRAY GP 200V 5A TO... |
BYQ28EF-200HE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE ARRAY GP 200V 5A IT... |
BYQ28EB-100-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE ARRAY GP 100V 5A TO... |
BYQ28EB-150-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
BYQ28EB-200-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE ARRAY GP 200V 5A TO... |
BYQ28EB-100HE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE ARRAY GP 100V 5A TO... |
BYQ28EB-150HE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
BYQ28EB-200HE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE ARRAY GP 200V 5A TO... |
BYQ28E-100HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 100V 5A TO... |
BYQ28E-150HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
BYQ28E-200HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 200V 5A TO... |
DIODE SILICON 650V 17A TO220Diode Array ...
DIODE MODULE 600V 35A SM4Diode Array 1 P...
DIODE MODULE 1.8KV 120A D1Diode Array 1 ...
DIODE ARRAY SCHOTTKY 35V TO220ABDiode Ar...
DIODE MODULE 1.4KV 59ADiode Array 1 Pair...
DIODE ARRAY GP 400V 20A TO3PNDiode Array...