Allicdata Part #: | 1740-1257-ND |
Manufacturer Part#: |
BYV10EX-600PQ |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | WeEn Semiconductors |
Short Description: | DIODE GEN PURP 600V 10A TO220F |
More Detail: | Diode Standard 600V 10A Through Hole TO-220FP |
DataSheet: | BYV10EX-600PQ Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.29106 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 2V @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220FP |
Operating Temperature - Junction: | -65°C ~ 175°C |
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A diode is a kind of device that consists of an anode, cathode, some wires, and a barrier layer. It is used to control the flow of electricity and to convert electric current from AC to DC. The BYV10EX-600PQ is a single rectifier diode. This device has a power dissipation of 3 watts, which is quite significant in comparison to other types of diodes.
The BYV10EX-600PQ is the most common type of single rectifier diode used in the industry. It is used in a wide array of applications, such as automobile, aerospace, and industrial. It is capable of controlling the flow of current and is able to withstand high temperatures. This device is known for providing consistent performance in a wide range of temperature and environmental conditions.
The BYV10EX-600PQ has a high current capability and a low forward voltage drop. This makes it an ideal choice for many high current applications. It is often used in switching applications and is also used in automotive junction boxes. It is commonly used in rectifiers to convert AC power to DC and to regulate the current flow.
The working principle of the BYV10EX-600PQ is fairly simple. It consists of an anode and a cathode that is embedded in a semiconductor material. The two electrodes are separated by a barrier layer that is usually made up of a ceramic material. When the anode is positively charged, the electrons in the barrier layer will move towards the anode. This flow of electrons creates an electric current, allowing the diode to regulate the current flow.
The BYV10EX-600PQ is a very versatile and reliable device. It is capable of handling a wide range of current and voltage, making it suitable for a variety of applications. It is a cost-effective option and is relatively easy to install. This device is a popular choice for many applications, such as rectification, switching, and automotive junction boxes.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BYV10-600PQ | WeEn Semicon... | 0.48 $ | 4914 | DIODE GEN PURP 600V 10A T... |
BYV10X-600PQ | WeEn Semicon... | 0.49 $ | 3293 | DIODE GEN PURP 600V 10A T... |
BYV14-TAP | Vishay Semic... | 0.14 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYV14-TR | Vishay Semic... | 0.14 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYV15-TAP | Vishay Semic... | 0.14 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYV15-TR | Vishay Semic... | 0.14 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYV16-TR | Vishay Semic... | 0.15 $ | 1000 | DIODE AVALANCHE 1KV 1.5A ... |
BYV16-TAP | Vishay Semic... | 0.15 $ | 15000 | DIODE AVALANCHE 1KV 1.5A ... |
BYV12-TAP | Vishay Semic... | 0.13 $ | 1000 | DIODE AVALANCHE 100V 1.5A... |
BYV12-TR | Vishay Semic... | 0.13 $ | 1000 | DIODE AVALANCHE 100V 1.5A... |
BYV13-TAP | Vishay Semic... | 0.13 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYV13-TR | Vishay Semic... | 0.13 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYV10EX-600PQ | WeEn Semicon... | 0.32 $ | 1000 | DIODE GEN PURP 600V 10A T... |
BYV10ED-600PJ | WeEn Semicon... | -- | 1000 | DIODE GEN PURP 600V 10A D... |
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