BYV27-200-TAP Discrete Semiconductor Products |
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Allicdata Part #: | BYV27-200-TAPTB-ND |
Manufacturer Part#: |
BYV27-200-TAP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 200V 2A SOD57 |
More Detail: | Diode Avalanche 200V 2A Through Hole SOD-57 |
DataSheet: | BYV27-200-TAP Datasheet/PDF |
Quantity: | 20000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.07V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 1µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | SOD-57, Axial |
Supplier Device Package: | SOD-57 |
Operating Temperature - Junction: | -55°C ~ 175°C |
Base Part Number: | BYV27-200 |
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BYV27-200-TAP Application Field and Working Principle
BYV27-200-TAP is a member of the highly popular range of single rectifiers. They are widely used in the power conversion, switching power supply and high-density integrated circuits markets. The BYV27-200-TAP is a very reliable and robust device, with excellent thermal performance.
The BYV27-200-TAP consisting of a silicon semiconductor and a gate can switch between a specific internal resistance and a short circuit with a relatively low gate voltage and current. The triggering voltage for the switching is usually about 0.8 V for the silicon rectifier and 0.6 V for the silicon gate, and when the applied power exceeds the critical value (Vth), the MOSFET switches to an internal resistor (RDs) from a low resistance path.
Application Field
The BYV27-200-TAP can be found in many products, including lighting systems, solar systems, and air conditioning systems. It is also popular in 12V, 24V, and 48V applications, where its low on-resistance makes it ideal for buck converters. Other common applications include switching power supplies and voltage regulators.
BYV27-200-TAP is an ideal choice for applications that require low on-state resistance and high efficiency, such as DC/DC converters. It has a maximum operation rating of 200W, making it suitable for a wide variety of applications. It has a low forward voltage drop of less than 2V, and an average on-state voltage of 1.8V.
The BYV27-200-TAP is also suitable for applications that require high transient voltage protection, such as automotive application. It can protect against transients such as load dump, where the voltage can exceed the device\'s maximum rating. The BYV27-200-TAP is also suitable for applications that require soft switching, such as switched mode power supplies and rectifier applications.
Working Principle
The BYV27-200-TAP is a voltage-controlled, self-protected silicon rectifier. It utilizes a silicon-controlled rectifier (SCR) structure, which is made up of a P-type region and an N-type region. The SCR contains a control gate, which is used to control the conduction current. When a positive voltage is applied to the gate, the device is turned on, resulting in a low voltage drop across the device and low power dissipation.
The BYV27-200-TAP has a built-in protection circuit, which is triggered by the gate voltage in case of an over-current condition. This prevents the device from being damaged, while the over-current is initially limited by a low voltage drop.
The BYV27-200-TAP has a high surge capability, allowing it to reliably withstand transients without any additional protection. It can also handle high peak currents, with an ability to switch currents up to 200A. This makes it ideal for switching power supplies, DC/DC converters, and other high-current applications.
The specific data is subject to PDF, and the above content is for reference
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