Allicdata Part #: | 1740-1169-ND |
Manufacturer Part#: |
BYV32E-200,127 |
Price: | $ 0.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | WeEn Semiconductors |
Short Description: | DIODE ARRAY GP 200V 20A TO220AB |
More Detail: | Diode Array 1 Pair Common Cathode Standard 200V 20... |
DataSheet: | BYV32E-200,127 Datasheet/PDF |
Quantity: | 4 |
1 +: | $ 0.78750 |
10 +: | $ 0.70245 |
100 +: | $ 0.54772 |
500 +: | $ 0.45247 |
1000 +: | $ 0.35721 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io) (per Diode): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 30µA @ 200V |
Operating Temperature - Junction: | 150°C (Max) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Base Part Number: | BYV32-200 |
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The BYV32E-200,127 is a type of diode array whose components have been structured in a diode-bridge configuration. This particular diode array contains two electrically separate diode bridges, one designed by Vishay to work in the forward-direction and the other working in the reverse-direction to handle the reverse-voltage. These two bridges, each composed of three silicon diodes, will combine and be simultaneously connected by four pins. This establishes a forward-biased current flow when the voltage drop across the two outer pins is greater than that of the centre pins while a reverse-biased current flow is achieved when the two outer pins’ voltages fall below that of the centre pins. In the former case, the BYV32E-200,127 will function as an ideal rectifier by allowing a freely flowing current in one single and predetermined direction. In an alternating current (AC) electrical circuit, the BYV32E-200,127 is commonly used to limit the amount of current that is fed backwards into the AC source.
The BYV32E-200,127 utilizes the PN junction, a fundamental semiconductor crystal\'s area wherein the atoms of n-type materials and those of p-type materials have been interspersed together in an alternating energy-band pattern. This junction\'s properties of conduction and non-conduction will be largely dependent on how it is biased. An forward-biased PN junction, as found in the BYV32E-200,127 infers the concentration of free electrons crossing to the depletion zone while that of a reverse-biased PN junction results in its width becoming larger. This results in a very low current flow across the junction.
The BYV32E-200,127 is a common choice when an especially fast and just as reliable rectification action is required. These Rectifiers supports applications such as lamp computing, lcd television, hard-disk drive, general-purpose switching, printer motors and computerized logic circuits. It can also be used as a part of inverters, DC/DC converters in smart electronic appliances and automotive electronic systems, and serves to convert the DC voltage into a more regulated level for many purposes.
The BYV32E-200,127 features a 400V avalanche energy rating, a range in voltages from 25V to 450V, a maximum repetitive peak reverse voltage (VRRM) rating of 200V and an average forward current (IFSM) rating of 127A. Its low profile and small size make it highly desirable in many miniature electrical products and it can operate in temperatures ranging from -55 to +175°C. Its combination of high levels of power and current density, as well as low leakage current and low forward voltage makes this diode array suitable for many applications in the field of rectification.
In conclusion, the BYV32E-200,127 is a highly reliable and cost-effective rectifier array composed of two separate sets of three diodes in a single package. It provides an effective solution for converting alternating currents into direct current while its high power and current density makes it suitable for use in many electrical products. Its array of desirable properties make it suitable for a wide range of applications in both the industrial and automotive electronics market.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BYV32E-200,127 | WeEn Semicon... | 0.87 $ | 4 | DIODE ARRAY GP 200V 20A T... |
BYV32-200-E3/45 | Vishay Semic... | -- | 1000 | DIODE ARRAY GP 200V 18A T... |
BYV32-200G | ON Semicondu... | -- | 2291 | DIODE ARRAY GP 200V 8A TO... |
BYV34-500,127 | WeEn Semicon... | 1.2 $ | 783 | DIODE ARRAY GP 500V 20A T... |
BYV34X-600,127 | WeEn Semicon... | 1.08 $ | 4282 | DIODE ARRAY GP 600V 20A T... |
BYV34-400,127 | WeEn Semicon... | 1.08 $ | 3479 | DIODE ARRAY GP 400V 20A T... |
BYV32E-150,127 | WeEn Semicon... | 0.84 $ | 1603 | DIODE ARRAY GP 150V 20A T... |
BYV38-TAP | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 1KV 2A SO... |
BYV32E-200PQ | WeEn Semicon... | -- | 1000 | DIODE ARRAY GP 200V 10A T... |
BYV32EB-200PQ | WeEn Semicon... | 0.29 $ | 1000 | BYV32EB-200PQ/TO263/STAND... |
BYV32-150801HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP TO220ABDio... |
BYV32EB-200PJ | WeEn Semicon... | 0.29 $ | 1000 | BYV32EB-200PQ TO263 STAND... |
BYV37-TAP | Vishay Semic... | 0.13 $ | 1000 | DIODE AVALANCHE 800V 2A S... |
BYV37-TR | Vishay Semic... | 0.13 $ | 1000 | DIODE AVALANCHE 800V 2A S... |
BYV30-600PQ | WeEn Semicon... | 0.61 $ | 1000 | DIODE GEN PURP 600V 30A T... |
BYV30B-600PJ | WeEn Semicon... | 0.74 $ | 1000 | DIODE GEN PURP 600V 30A D... |
BYV30JT-600PQ | WeEn Semicon... | 0.88 $ | 1000 | DIODE GEN PURP 600V 30A T... |
BYV30W-600PQ | WeEn Semicon... | 0.9 $ | 1000 | DIODE GEN PURP 600V 30A T... |
BYV30X-600PQ | WeEn Semicon... | 0.61 $ | 1000 | DIODE GEN PURP 600V 30A T... |
BYV32-100-E3/45 | Vishay Semic... | 1.28 $ | 1000 | DIODE ARRAY GP 100V 18A T... |
BYV32-150-E3/45 | Vishay Semic... | 0.63 $ | 1000 | DIODE ARRAY GP 150V 18A T... |
BYV32-50-E3/45 | Vishay Semic... | 0.63 $ | 1000 | DIODE ARRAY GP 50V 18A TO... |
BYV32EB-200,118 | WeEn Semicon... | 0.59 $ | 1000 | DIODE ARRAY GP 200V 20A D... |
BYV34G-600,127 | WeEn Semicon... | 0.6 $ | 1000 | DIODE ARRAY GP 600V 20A I... |
BYV32E-100,127 | WeEn Semicon... | 0.34 $ | 1000 | DIODE ARRAY GP 100V 20A T... |
BYV32-200 | ON Semicondu... | 0.0 $ | 1000 | DIODE ARRAY GP 200V 8A TO... |
BYV34-600,127 | WeEn Semicon... | 0.47 $ | 1000 | DIODE ARRAY GP 600V 20A T... |
BYV32-100HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 100V 18A T... |
BYV32-150HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 150V 18A T... |
BYV32-200HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 200V 18A T... |
BYV32-50HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 50V 18A TO... |
BYV32G-200,127 | WeEn Semicon... | 0.46 $ | 1000 | DIODE ARRAY GP 200V 20A I... |
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