BZD27B22P-E3-08

Series:	Automotive, AEC-Q101, BZD27B
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	22V
Tolerance:	--
Power - Max:	800mW
Impedance (Max) (Zzt):	15 Ohms
Current - Reverse Leakage @ Vr:	1µA @ 16V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	DO-219AB
Supplier Device Package:	DO-219AB (SMF)

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The BZD27B22P-E3-08 is a diodes - zener - single device that is used in a variety of application fields. It is a type of Zener diode, which is a type of diode designed to reverse breakdown at a predetermined voltage. This breakdown voltage is typically determined by the device’s construction, but can be different depending on the type of diode. The BZD27B22P-E3-08 device has a reverse breakdown voltage of 8 volts and a power dissipation rating of 500mW. The diode\'s package size is in a DO-213AB package, designed to be lightweight and compact. Additionally, the device is designed to have a low thermal resistance – making it suitable for use in applications that require low voltage and power ratings. In terms of application fields, the BZD27B22P-E3-08 is used in a variety of electronic circuits and equipment. This includes logic circuits, linear regulators, switching circuits, voltage references, motor drives and protection circuits. Typically, the device is used either as a reference source of voltage or a protection device, as it can effectively withstand high-voltage pulse loads, while still providing low-power ratings.In terms of working principle, the BZD27B22P-E3-08 is a type of diode that is specifically designed for reverse breakdown. When a voltage, usually greater than the diode’s breakdown voltage, is applied to the diode, it begins to conduct electricity. This is a result of the Zener effect (or avalanche breakdown), where a high enough electric field causes more electrons to be created, thus providing more conduction. The BZD27B22P-E3-08 also features a “special” structure, as it uses a series of layers to form its design. This allows for a higher breakdown voltage, compared to a standard diode. The device also has a low dispersion voltage and low capacitance, making it suitable for circuits that require high reliability and precision. Overall, the BZD27B22P-E3-08 is an extremely reliable and convenient device, as it is suitable for a variety of circuits and applications. Its reverse breakdown voltage and reverse leakage current are low, which is necessary for high-voltage applications. Additionally, the device is designed to be lightweight and compact, making it suitable for small space applications.

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