| Allicdata Part #: | BZD27C160P-M-08-ND |
| Manufacturer Part#: |
BZD27C160P-M-08 |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE ZENER 800MW SMF DO219-M |
| More Detail: | Zener Diode 160V 800mW Surface Mount DO-219AB (SM... |
| DataSheet: | BZD27C160P-M-08 Datasheet/PDF |
| Quantity: | 1000 |
| 30000 +: | $ 0.06174 |
| Series: | Automotive, AEC-Q101, BZD27C |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 160V |
| Tolerance: | -- |
| Power - Max: | 800mW |
| Impedance (Max) (Zzt): | 350 Ohms |
| Current - Reverse Leakage @ Vr: | 1µA @ 120V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-219AB |
| Supplier Device Package: | DO-219AB (SMF) |
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Diodes - Zener - Single - BZD27C160P-M-08 Application Field and Working Principle
BZD27C160P-M-08 is a single zener breakdown diode widely used in a variety of applications. In this article, we will discuss its application field and working principle.
Applications of BZD27C160P-M-08
The BZD27C160P-M-08 is commonly used for a variety of applications, including:
- Over voltage protection circuits
- Noise suppression circuits
- Clamping circuits
- Precision voltage reference circuits
- Power supplies
In addition to these, the BZD27C160P-M-08 can also be used in other applications, such as waveform clipping circuits, diode logic circuits, over-current protection circuits and temperature compensation circuits.
Working Principle of BZD27C160P-M-08
The BZD27C160P-M-08 is a single zener diode, which uses the zener breakdown effect to regulate voltage. Under normal conditions, diode current is mainly limited by the presence of the diode\'s residual junction capacitance. However, when the reverse voltage exceeds the zener breakdown voltage (Vz), the current increases exponentially. The zener breakdown voltage (Vz) is determined by the construction of the device, and can be controlled by adding a voltage breakdown layer in the semiconductor material. The breakdown layer allows the current to flow in one direction, and current is suppressed in the opposite direction. In addition, the addition of the breakdown layer also reduces the dynamic resistance of the diode, allowing for greater current flow across the diode.
When a BZD27C160P-M-08 diode is placed in a circuit, it will act as a zener voltage regulator. This means that the voltage across the diode remains constant, regardless of the current passing through it. The ability of the device to maintain a constant voltage is due to the zener “knee” voltage. When the current passing through the diode is increased, the voltage across the diode will increase in a linear fashion. However, when the current exceeds the “knee” voltage, the voltage across the diode will remain constant.
Advantages of BZD27C160P-M-08
The BZD27C160P-M-08 offers a range of advantages including:
- High breakdown voltage
- High maximum DC power dissipation
- Low dynamic ( internal ) resistance
- Excellent temperature stability
- Very low input capacitance
- High thermal resistance
- High frequency operation
These features make the BZD27C160P-M-08 an ideal choice for a wide range of applications, including overvoltage protection, voltage regulation, and current limiting.
Conclusion
The BZD27C160P-M-08 is a single zener breakdown diode, and is widely used for a variety of applications. The device is capable of providing high breakdown voltage and excellent temperature stability. In addition, the low input capacitance and high thermal resistance make the BZD27C160P-M-08 an ideal choice for high frequency operation.
The specific data is subject to PDF, and the above content is for reference
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BZD27C160P-M-08 Datasheet/PDF