BZD27C68PHRVG Allicdata Electronics
Allicdata Part #:

BZD27C68PHRVG-ND

Manufacturer Part#:

BZD27C68PHRVG

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 68V 1W SUB SMA
More Detail: Zener Diode 68V 1W ±5.88% Surface Mount Sub SMA
DataSheet: BZD27C68PHRVG datasheetBZD27C68PHRVG Datasheet/PDF
Quantity: 1000
12000 +: $ 0.06081
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 68V
Tolerance: ±5.88%
Power - Max: 1W
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 51V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Description

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Diodes - Zener - Single

The BZD27C68PHRVG is a silicon-based diode, belonging to the zener diode family, specifically in the single diode subcategory. It is designed to be used in applications that require protection against conditions of high electrical stress, making it a very valuable tool in electrical engineering. In addition, its small size and fairly low cost makes it an attractive option for a wide range of applications, where cost-efficiency and reliability are desired.

Application Field

The BZD27C68PHRVG is used in applications where dissipating higher voltages and current is required, such as in power supplies. It is also commonly used in motor control and in motor speed regulation. In addition, it is often used in industrial robots and automated machinery.

This diode can also be found in medical equipment and in analog signal processing circuits. It is used in radio-frequency applications, like in radar and telecommunications, because of its excellent reverse power handling characteristics. Furthermore, it is widely used in LCD and LED backlighting, as well as in low-voltage AC/DC converters.

Working Principle

The BZD27C68PHRVG works by releasing a surge of electrons across the threshold voltage, when it is exposed to a certain voltage level. This is because the diode is constructed from a semiconductor material, which consists of p-type and n-type layers. The p-type layers are composed of atoms with three valance electrons, and the n-type layers are composed with atoms that have five valance electrons. When a voltage is applied across the diode, the three valance electrons of the p-type layer move to the n-type layer, and the five valance electrons of the n-type layer cross the P-N junction and enter into the P-type layer.

The BZD27C68PHRVG is designed to block voltages that are larger than the threshold voltage, allowing low voltage signals to pass while effectively dissipating higher voltage signals. In addition, the Zener voltage of this diode can be precisely controlled by adjusting the doping levels of the semiconductor material.

Conclusion

The BZD27C68PHRVG is an incredibly useful diode for applications where protection against higher electrical stress is needed. Its wide range of applications, small size, and relatively low cost, make it a great choice for numerous industrial and commercial applications. In addition, its ability to precisely control the Zener voltage makes it very attractive for a variety of radio-frequency, medical and analog signal processing applications.

The specific data is subject to PDF, and the above content is for reference

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