BZD27C16P MQG Allicdata Electronics
Allicdata Part #:

BZD27C16PMQG-ND

Manufacturer Part#:

BZD27C16P MQG

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 16.2V 1W SUB SMA
More Detail: Zener Diode 16.2V 1W ±5.55% Surface Mount Sub SMA
DataSheet: BZD27C16P MQG datasheetBZD27C16P MQG Datasheet/PDF
Quantity: 1000
10000 +: $ 0.05906
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 16.2V
Tolerance: ±5.55%
Power - Max: 1W
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 12V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Description

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The BZD27C16P MQG Diode is a type of Zener Diode, also known as a Zener Single. It is a two-terminal, symmetric-recovery device, with a reverse bias voltage rating of 16V and a power dissipation of 200mW. It is used in applications such as ESD protection and voltage regulation, as well as in power systems, which require the device to handle high current.The BZD27C16P MQG Diode is made of a crystalline structure of N-type (N-type doping) Silicon. The structure is designed to ensure that the electrons are forced away from the silicon junction, therefore creating a voltage drop when reverse bias voltage is applied to the diode. This voltage drop is known as the Zener Breakdown Voltage and is determined by the doping level of the silicon.When forward bias voltage is applied to the diode, it passes current due to the electrons moving from the N-type to the P-type (P-type doping) region of the silicon. The current flow is known as the Forward Conduction Current and is determined by the doping level of the silicon and the applied voltage.When reverse bias voltage is applied to the BZD27C16P MQG Diode, it passes current due to the Zener Breakdown Voltage. The Zener Breakdown Voltage is determined by the doping level of the silicon and the applied voltage. This current is known as the Reverse Leakage Current and is used to regulate the voltage of the system. In addition, the BZD27C16P MQG Diode provides protection against electrostatic discharge (ESD), as well as against over-voltage and over-current conditions in power systems. It can also be used as an efficient way to control the output voltage of switching power supplies.The BZD27C16P MQG Diode has a wide variety of applications and is an important device to have in any electronic system. It is used in power systems for voltage regulation, for ESD protection, for over-voltage protection and for controlling the output voltage of switching power supplies. It is also used in a variety of applications such as automotive, cell phones, medical, instrumentation and consumer electronics.The BZD27C16P MQG Diode provides efficient and reliable performance in a wide range of environments, making it an ideal choice for a number of applications. It is also very cost-effective and provides flexibility in its use.

The specific data is subject to PDF, and the above content is for reference

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