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Diodes - Zener - Single

The BZG03C100-M3-08 is an electronic component that is part of the single zener diodes family. It is designed for general purpose applications and provides low leakage current in a small surface-mount package. The diode is ideally suited for a wide range of applications and is widely employed in many fields, such as power supply, telecom, networking, automated test equipment, consumer electronics, and various industrial applications.

Description

The BZG03C100-M3-08 is a single zener diode that operates with a maximum voltage of 100 Volts and a power dissipation of 350 mW (at 25°C). It is a semiconductor device that provides a specific voltage when operated in the reverse bias direction. The diode is constructed of a single N-junction and is often used in series with a resistor to provide a voltage reference.

The diode is optimized with low leakage current, low profile, low capacitance, and low inductance, making it suitable for many applications. It also has a physically small footprint and requires only two external components for mounting. The device is compliant with the RoHS (Restriction of Hazardous Substances) directive.

Features and Benefits

• Low Leakage Current: The BZG03C100-M3-08 has a low maximum leakage current rating of 2.0 µA.
• Low Profile: Thanks to its low profile of 0.75 mm, the component offers more design flexibility.
• Small Footprint: The diode takes up only a small surface-mount area.
• Shallow ESD Protection: The diode offers built-in electrostatic discharge protection.
• RoHS compliant: The component conforms to the RoHS directive.

Applications

The advantages of the BZG03C100-M3-08 make it ideal for a wide range of applications. It has the ability to provide reliable and precise voltage regulation and is used in many fields, such as:

• Power supply
• Telecom
• Networking Equipment
• Automated Test Equipment
• Consumer Electronics
• Various Industrial Applications

Working Principle

When the BZG03C100-M3-08 is connected in the reverse bias direction, it operates as a zener diode. When a reverse voltage greater than the rated zener voltage of the device is applied to the diode, current begins to flow through the junction. This current is referred to as the "zener current". As more voltage is applied, the zener current increases, and the diode draws more power and begins to dissipate heat through its package.

At the junction, holes from the P-type semiconductor and electrons from the N-type semiconductor are brought together. As the voltage is increased, two layers of electrons collide and some of them are scattered. This creates an avalanche process which results in a higher current than the zener current and creates a population inversion across the junction. This population inversion produces a higher gain allowing the component to establish a reference voltage.

The zener voltage of the component is accurately determined by its zener breakdown voltage. The component also has a low dynamic impedance and a wide temperature range, making it suitable for many voltage regulation applications.

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