
Allicdata Part #: | BZG04-27-M3-08-ND |
Manufacturer Part#: |
BZG04-27-M3-08 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 27V 50A DO214AC |
More Detail: | Zener Diode 33V 1.25W Surface Mount DO-214AC (SMA... |
DataSheet: | ![]() |
Quantity: | 1000 |
6000 +: | $ 0.11510 |
Series: | BZG04-M |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | -- |
Power - Max: | 1.25W |
Current - Reverse Leakage @ Vr: | 5µA @ 27V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 500mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
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Diodes are an important part of the electronics world and one type of diode is the Zener diode. The BZG04-27-M3-08 is a single Zener diode that is designed for a wide range of applications.
The BZG04-27-M3-08 is a silicon Zener diode that has an axial lead length of 5.2mm and a maximum power dissipation of 500mW. The nominal working voltage for the diode is 5.6V, with a maximum working voltage of 6V. The voltage regulation of the device is 6% and it has a breakdown voltage of 6.7V.
Zener diodes are used to regulate the voltage in a circuit. The diode conducts in both forward and reverse bias, however their behavior is different in both directions. When the voltage is below the breakdown voltage, the diode will be reverse biased and will not allow any current to flow through it. However, when the voltage is above the breakdown voltage, the diode will be forward biased and will allow an electric current to flow through it. This behavior is called Zener breakdown, which is the main purpose of the device.
The BZG04-27-M3-08 can be used in a variety of applications, such as voltage regulators, low-dropout linear regulators, low-noise voltage regulators, low-power oscillators, power supply circuits and overvoltage protection circuits. It is also suitable for automotive electronics, consumer electronics, and industrial electronics.
The working principle of a Zener diode is based on the fact that, when reverse biased, the theoretical breakdown voltage of a PN junction is higher than the nominal breakdown voltage. When the voltage exceeds the breakdown voltage, the PN junction breaks down, allowing a flow of current. This current is caused by the dissociation of charges and their subsequent recombination, which leads to an increase in the electric field. This increase in electric field results in a power dissipation, which generates a self-adjusting nonlinear negative resistance characteristic and the device begins to conduct. As the voltage increases, the current through the diode increases and the voltage decreases at a constant rate.
The BZG04-27-M3-08 is suitable for a wide range of applications as it provides a high voltage breakdown, low current leakage, high stability, and high reliability. The device is also easy to install and use and is suitable for applications where space is at a premium.
The specific data is subject to PDF, and the above content is for reference
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