BZG05C20-HE3-TR

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Voltage - Zener (Nom) (Vz):	20V
Tolerance:	±5%
Power - Max:	1.25W
Impedance (Max) (Zzt):	24 Ohms
Current - Reverse Leakage @ Vr:	500nA @ 15V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	150°C
Mounting Type:	Surface Mount
Package / Case:	DO-214AC, SMA
Supplier Device Package:	DO-214AC

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Diodes - Zener - Single

The BZG05C20-HE3-TR is a special type of diode that falls under the category of Zener (or breakdown) diodes. It is a single component, which means there is only one semiconductor layer. This diode designed to regulate power within general purpose and automotive electronics. The BZG05C20-HE3-TR showcases a very high peak power precisely because it is single, producing an efficient total power regulation of up to 20 volts. The forward voltage drop (VF) left over from this device is also extremely low, making it an ideal device for many differently sized applications, including specialty medical and aerospace applications. The wide range of applications for this device include ESD protection, spike filters and power clamping. The BZG05C20-HE3-TR is a specialized Zener diode because it can function with remarkably low power dissipation. This makes it incredibly useful for heat and noise sensitive applications, such as those in precision monitoring and controlling of power supplies. Its power dissipation is typically no more than 0.75 watts. The breakdown voltage of this device also happens to be very low, meaning that there are very few voltage variations when using this device. In other words, the voltage threshold (VZ) stays consistent in this diode, making it an ideal device to use in permanent or portable applications. The working principle behind the unidirectional current flow of the BZG05C20-HE3-TR is known as a Zener breakdown. In this case, the breakdown takes place across the p-n junction. This p-n junction is capable of withstand tolerances well over 2kV, which makes it highly suited for the high-voltage applications it was intended for. This breakdown creates an electric field across the junction, which causes a voltage drop and prevents current from passing through it.The intrinsic structure of this diode relies also on a high quality insulating component, referred to as an optimized enhanced profile layer. This layer of insulation is generally referred to as a veil, and is able to achieve an extremely low leakage current of just 4 µA. This insulation works in tandem with the Zener breakdown to regulate voltage outputs, which results in an extended range for the device.In conclusion, the BZG05C20-HE3-TR single component diode offers a wide range of application options with its high peak power, low VF drop, low power dissipation and consistent VZ breakdown threshold. The optimized enhanced profile layer also provides it with a very low leakage current, making it a reliable choice for sensitive applications. To top it off, its wide operating temperature makes it an ideal device for both permanent and portable applications.

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