
Allicdata Part #: | BZG05C3V9TR3-ND |
Manufacturer Part#: |
BZG05C3V9TR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 1.25W DO214AC |
More Detail: | Zener Diode 9.3V 1.25W Surface Mount DO-214AC |
DataSheet: | ![]() |
Quantity: | 1000 |
0 +: | $ 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Voltage - Zener (Nom) (Vz): | 9.3V |
Tolerance: | -- |
Power - Max: | 1.25W |
Impedance (Max) (Zzt): | 500 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC |
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Diodes - Zener - Single is a device that converts a varying input current into a corresponding varying output voltage or vice versa. The BZG05C3V9TR3 Diode can be used in this application field as it is a Zener diode consisting of a semiconductor PN junction with a low-temperature coefficient of junction voltage, low noise and low leakage current.
The BZG05C3V9TR3 Diode is intended for signal isolation, surge protection and ESD protection. It is designed to protect signal lines and critical circuits from damage caused by transient voltage spikes. The design of the BZG05C3V9TR3 allows it to operate over a wide input voltage range and operate over a wide temperature range.
The basic principle of operation for the BZG05C3V9TR3 is the same as for other Zener Diodes. It utilizes a reverse biased PN junction which results in the diode\'s blocking capability. The characteristics of a reversebiased PN junction depend on the doping of the junction layers and the doping-induced depletion layer. Under reverse voltage, a Zener diode allows significant current to flow through the junction.
The Zener voltage used in the BZG05C3V9TR3 is 3V. Exceeding the Zener voltage can result in increased leakage current which can result in increased power dissipation of the diode and higher junction temperatures. The maximum power dissipation of the diode is 300 mW.
The BZG05C3V9TR3 provides rapid response time and wide variety of applications. It can be used as a voltage regulator, temperature compensated voltage reference, circuit protection device, and a voltage dividers. The diode is available in a TO-18 case with 2-lead leadless package and has a maximum forward voltage drop of 1.1V.
The BZG05C3V9TR3 application field and working principle make it an ideal diode for a variety of applications. With its ease of use and low cost, the BZG05C3V9TR3 Diode is an effective solution for ESD, signal isolation, and surge protection. It operates over a wide temperature range and withstands transient voltage spikes, making it a reliable option for designers and manufacturers.
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